Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx: O Bilayer Structure

Tae Ho Lee, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (∼ 0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was > 105 s at room temperature.

Original languageEnglish
Article number7210154
Pages (from-to)1024-1026
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1

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Durability
Gallium
Silicon nitride
Oxygen
Degradation
Oxides
Temperature
silicon nitride
gallium oxide

Keywords

  • Bilayer
  • diodelike
  • gallium oxide
  • resistive random access memory
  • silicon nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx : O Bilayer Structure. / Lee, Tae Ho; Park, Ju Hyun; Kim, Tae Geun.

In: IEEE Electron Device Letters, Vol. 36, No. 10, 7210154, 01.10.2015, p. 1024-1026.

Research output: Contribution to journalArticle

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