Direct electronic transport through an ensemble of InAs self-assembled quantum dots

S. K. Jung, S. W. Hwang, B. H. Choi, S. I. Kim, Jung ho Park, Yong Kim, E. K. Kim, S. K. Min

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Abstract

Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots.

Original languageEnglish
Pages (from-to)714-716
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number5
Publication statusPublished - 1999 Feb 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jung, S. K., Hwang, S. W., Choi, B. H., Kim, S. I., Park, J. H., Kim, Y., ... Min, S. K. (1999). Direct electronic transport through an ensemble of InAs self-assembled quantum dots. Applied Physics Letters, 74(5), 714-716.