Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1999 Feb 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)