Direct electronic transport through an ensemble of InAs self-assembled quantum dots

S. K. Jung; S. W. Hwang; B. H. Choi; S. I. Kim; J. H. Park; Yong Kim; E. K. Kim; S. K. Min

doi:10.1063/1.122996

Direct electronic transport through an ensemble of InAs self-assembled quantum dots

S. K. Jung, S. W. Hwang, B. H. Choi, S. I. Kim, J. H. Park, Yong Kim, E. K. Kim, S. K. Min

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots.

Original language	English
Pages (from-to)	714-716
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	5
DOIs	https://doi.org/10.1063/1.122996
Publication status	Published - 1999 Feb 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122996

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abstract = "Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots.",

author = "Jung, {S. K.} and Hwang, {S. W.} and Choi, {B. H.} and Kim, {S. I.} and Park, {J. H.} and Yong Kim and Kim, {E. K.} and Min, {S. K.}",

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AU - Park, J. H.

AU - Kim, Yong

AU - Kim, E. K.

AU - Min, S. K.

PY - 1999/2/1

Y1 - 1999/2/1

N2 - Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots.

AB - Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots.

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Direct electronic transport through an ensemble of InAs self-assembled quantum dots

Abstract

ASJC Scopus subject areas

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