Direct growth of SiC nanorods on Si using APCVD and single precursors

Daeho Rho, Jaesoo Kim, Dong Jin Byun, Jaewoong Yang, Junggeun Jhin, Nari Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ∼ 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.

Original languageEnglish
Pages (from-to)701-704
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26

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Nanorods
nanorods
catalysts
Catalysts
Growth temperature
deactivation
coating
micrometers
flow velocity
Gases
Flow rate
Coatings
microstructure
Microstructure
gases

Keywords

  • APCVD
  • Nanorod
  • SiC
  • SiC nanorod
  • Tetramethylsilane

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Rho, D., Kim, J., Byun, D. J., Yang, J., Jhin, J., & Kim, N. (2004). Direct growth of SiC nanorods on Si using APCVD and single precursors. Materials Science Forum, 449-452(II), 701-704.

Direct growth of SiC nanorods on Si using APCVD and single precursors. / Rho, Daeho; Kim, Jaesoo; Byun, Dong Jin; Yang, Jaewoong; Jhin, Junggeun; Kim, Nari.

In: Materials Science Forum, Vol. 449-452, No. II, 26.07.2004, p. 701-704.

Research output: Contribution to journalArticle

Rho, D, Kim, J, Byun, DJ, Yang, J, Jhin, J & Kim, N 2004, 'Direct growth of SiC nanorods on Si using APCVD and single precursors', Materials Science Forum, vol. 449-452, no. II, pp. 701-704.
Rho D, Kim J, Byun DJ, Yang J, Jhin J, Kim N. Direct growth of SiC nanorods on Si using APCVD and single precursors. Materials Science Forum. 2004 Jul 26;449-452(II):701-704.
Rho, Daeho ; Kim, Jaesoo ; Byun, Dong Jin ; Yang, Jaewoong ; Jhin, Junggeun ; Kim, Nari. / Direct growth of SiC nanorods on Si using APCVD and single precursors. In: Materials Science Forum. 2004 ; Vol. 449-452, No. II. pp. 701-704.
@article{58e1ae60a1aa40fcbc6ba6bb7233a2dd,
title = "Direct growth of SiC nanorods on Si using APCVD and single precursors",
abstract = "SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ∼ 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.",
keywords = "APCVD, Nanorod, SiC, SiC nanorod, Tetramethylsilane",
author = "Daeho Rho and Jaesoo Kim and Byun, {Dong Jin} and Jaewoong Yang and Junggeun Jhin and Nari Kim",
year = "2004",
month = "7",
day = "26",
language = "English",
volume = "449-452",
pages = "701--704",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "II",

}

TY - JOUR

T1 - Direct growth of SiC nanorods on Si using APCVD and single precursors

AU - Rho, Daeho

AU - Kim, Jaesoo

AU - Byun, Dong Jin

AU - Yang, Jaewoong

AU - Jhin, Junggeun

AU - Kim, Nari

PY - 2004/7/26

Y1 - 2004/7/26

N2 - SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ∼ 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.

AB - SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ∼ 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.

KW - APCVD

KW - Nanorod

KW - SiC

KW - SiC nanorod

KW - Tetramethylsilane

UR - http://www.scopus.com/inward/record.url?scp=18844474402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844474402&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:18844474402

VL - 449-452

SP - 701

EP - 704

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - II

ER -