Direct growth of SiC nanorods on Si using APCVD and single precursors

Daeho Rho, Jaesoo Kim, Dong Jin Byun, Jaewoong Yang, Junggeun Jhin, Nari Kim

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1 Citation (Scopus)

Abstract

SiC nanorod was grown by APCVD using TMS. Grown SiC nanorods had a 10 ∼ 60nm diameters and lengths of several micrometers. Nanorod's diameters and lengths were different by kind of catalysts. Nanorod's growth scheme was divided by two regions with diameter's variations. At first region, nanorod was grown by VLS mechanism, but at the second region, nanorod growth was made by VS reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanorod's diametesr and its lengths. And the kind of catalysts and coating methods were affected growth direction and microstructures too.

Original languageEnglish
Pages (from-to)701-704
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26

Keywords

  • APCVD
  • Nanorod
  • SiC
  • SiC nanorod
  • Tetramethylsilane

ASJC Scopus subject areas

  • Materials Science(all)

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    Rho, D., Kim, J., Byun, D. J., Yang, J., Jhin, J., & Kim, N. (2004). Direct growth of SiC nanorods on Si using APCVD and single precursors. Materials Science Forum, 449-452(II), 701-704.