Direct nanowiring of carbon nanotubes for high integrated electronic and spintropic devices

Yun-Hi Lee, Yoon Taek Jang, Chang Hoon Choi, Dong Ho Kim, Chang Woo Lee, Jae Eun Lee, Young Soo Han, Sang Soo Yoon, Jin Koog Shin, Sung Tae Kim, Eun Kyu Kim, Byeong Kwon Ju

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Carbon nanotubes were directly nanowired using growth barrier technology utilizing chemical vapor deposition (CVD) at the relatively low process temperature of 650-750°C. Using this method, CNTs bridging two parallel patterned structures with a perfect "Y-junction" or "straight line" were formed.

Original languageEnglish
Pages (from-to)1371-1373
Number of pages3
JournalAdvanced Materials
Volume13
Issue number18
DOIs
Publication statusPublished - 2001 Sep 14
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Lee, Y-H., Jang, Y. T., Choi, C. H., Kim, D. H., Lee, C. W., Lee, J. E., Han, Y. S., Yoon, S. S., Shin, J. K., Kim, S. T., Kim, E. K., & Ju, B. K. (2001). Direct nanowiring of carbon nanotubes for high integrated electronic and spintropic devices. Advanced Materials, 13(18), 1371-1373. https://doi.org/10.1002/1521-4095(200109)13:18<1371::AID-ADMA1371>3.0.CO;2-S