Direct observation of localized defect states in semiconductor nanotube junctions

Hajin Kim, J. Lee, S. J. Kahng, Y. W. Son, S. B. Lee, C. K. Lee, J. Ihm, Young Kuk

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

Scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps was studied. Characteristic features of the wave functions at different energy levels were exhibited in the atomically resolved scanning tunneling microscopy. The experimental observations in terms of the pentagon-heptagon defects in the junction were interpreted.

Original languageEnglish
Pages (from-to)2161071-2161074
Number of pages4
JournalPhysical review letters
Volume90
Issue number21
Publication statusPublished - 2003 May 30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Kim, H., Lee, J., Kahng, S. J., Son, Y. W., Lee, S. B., Lee, C. K., Ihm, J., & Kuk, Y. (2003). Direct observation of localized defect states in semiconductor nanotube junctions. Physical review letters, 90(21), 2161071-2161074.