Direct observation of localized defect states in semiconductor nanotube junctions

Hajin Kim, J. Lee, Se-Jong Kahng, Y. W. Son, S. B. Lee, C. K. Lee, J. Ihm, Young Kuk

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

Scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps was studied. Characteristic features of the wave functions at different energy levels were exhibited in the atomically resolved scanning tunneling microscopy. The experimental observations in terms of the pentagon-heptagon defects in the junction were interpreted.

Original languageEnglish
Pages (from-to)2161071-2161074
Number of pages4
JournalPhysical Review Letters
Volume90
Issue number21
Publication statusPublished - 2003 May 30

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scanning tunneling microscopy
nanotubes
defects
energy levels
carbon nanotubes
wave functions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, H., Lee, J., Kahng, S-J., Son, Y. W., Lee, S. B., Lee, C. K., ... Kuk, Y. (2003). Direct observation of localized defect states in semiconductor nanotube junctions. Physical Review Letters, 90(21), 2161071-2161074.

Direct observation of localized defect states in semiconductor nanotube junctions. / Kim, Hajin; Lee, J.; Kahng, Se-Jong; Son, Y. W.; Lee, S. B.; Lee, C. K.; Ihm, J.; Kuk, Young.

In: Physical Review Letters, Vol. 90, No. 21, 30.05.2003, p. 2161071-2161074.

Research output: Contribution to journalArticle

Kim, H, Lee, J, Kahng, S-J, Son, YW, Lee, SB, Lee, CK, Ihm, J & Kuk, Y 2003, 'Direct observation of localized defect states in semiconductor nanotube junctions', Physical Review Letters, vol. 90, no. 21, pp. 2161071-2161074.
Kim H, Lee J, Kahng S-J, Son YW, Lee SB, Lee CK et al. Direct observation of localized defect states in semiconductor nanotube junctions. Physical Review Letters. 2003 May 30;90(21):2161071-2161074.
Kim, Hajin ; Lee, J. ; Kahng, Se-Jong ; Son, Y. W. ; Lee, S. B. ; Lee, C. K. ; Ihm, J. ; Kuk, Young. / Direct observation of localized defect states in semiconductor nanotube junctions. In: Physical Review Letters. 2003 ; Vol. 90, No. 21. pp. 2161071-2161074.
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