Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions

Hajin Kim, J. Lee, Se-Jong Kahng, Y. W. Son, S. B. Lee, C. K. Lee, J. Ihm, Young Kuk

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report scanning tunneling microscopy of semiconductor-semiconductor carbon nanotube junctions with different band gaps. Characteristic features of the wave functions at different energy levels, such as a localized defect state, are clearly exhibited in the atomically resolved scanning tunneling spectroscopy. The peaks of the Van Hove singularity on each side penetrate and decay into the opposite side across the junction over a distance of [Formula presented]. These experimental features are accounted for, with the help of tight-binding calculation, by the presence of pentagon-heptagon pair defects at the junction.

Original languageEnglish
Number of pages1
JournalPhysical Review Letters
Volume90
Issue number21
DOIs
Publication statusPublished - 2003 Jan 1

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nanotubes
defects
trucks
scanning tunneling microscopy
energy levels
carbon nanotubes
wave functions
scanning
decay
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions. / Kim, Hajin; Lee, J.; Kahng, Se-Jong; Son, Y. W.; Lee, S. B.; Lee, C. K.; Ihm, J.; Kuk, Young.

In: Physical Review Letters, Vol. 90, No. 21, 01.01.2003.

Research output: Contribution to journalArticle

Kim, Hajin ; Lee, J. ; Kahng, Se-Jong ; Son, Y. W. ; Lee, S. B. ; Lee, C. K. ; Ihm, J. ; Kuk, Young. / Direct Observation of Localized Defect States in Semiconductor Nanotube Junctions. In: Physical Review Letters. 2003 ; Vol. 90, No. 21.
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