Direct patterning of nanoscale cu2o resistive material for soft nanoelectronics

Sung Hoon Hong, Joong Yeon Cho, Ki Yeon Yang, Heon Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate a simple direct nanoimprint lithography method of fabricating a copper oxide memory device for soft nanoelectronics. The process was done at room temperature with low pressure, so that a Cu2O resistive nanoarray could be fabricated not only on the Si substrate but also on the flexible polyimide substrate. The resistive switching of the fabricated 200nm Cu2O nanopillar was observed at 2 V with a low current compliance of 5 μA from a high-resistance state to a low-resistance state, and the reversible switching was done with a fast switching time of 10 ns and high endurance.

Original languageEnglish
Article number126501
JournalApplied Physics Express
Volume5
Issue number12
DOIs
Publication statusPublished - 2012 Dec 1

Fingerprint

Nanoelectronics
Nanoimprint lithography
Copper oxides
endurance
low resistance
high resistance
copper oxides
Substrates
low currents
polyimides
Polyimides
Durability
lithography
low pressure
Data storage equipment
room temperature
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Direct patterning of nanoscale cu2o resistive material for soft nanoelectronics. / Hong, Sung Hoon; Cho, Joong Yeon; Yang, Ki Yeon; Lee, Heon.

In: Applied Physics Express, Vol. 5, No. 12, 126501, 01.12.2012.

Research output: Contribution to journalArticle

Hong, Sung Hoon ; Cho, Joong Yeon ; Yang, Ki Yeon ; Lee, Heon. / Direct patterning of nanoscale cu2o resistive material for soft nanoelectronics. In: Applied Physics Express. 2012 ; Vol. 5, No. 12.
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