Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning

Jiyoung Chang, Yumeng Liu, Kwang Heo, Byung Yang Lee, Seung Wuk Lee, Liwei Lin

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A novel process to create self-aligned and chemically doped graphene channel is presented. Near-field electrospinning is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Field effects of p- and n-type graphene channel transistors are fabricated and complimentary inverter circuitry using electronic junctions is successfully demonstrated.

Original languageEnglish
Pages (from-to)1920-1925
Number of pages6
JournalSmall
Volume10
Issue number10
DOIs
Publication statusPublished - 2014 May 28

Keywords

  • electrical junction
  • field effect transistor
  • graphene
  • graphene doping
  • near-field electrospinning

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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