Direct-write n- and p-type graphene channel FETs

Jiyoung Chang, Yumeng Liu, Heo Kwang, Byung Yang Lee, Seung Wuk Lee, Liwei Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a maskless, direct-write process to create both n- and p-type graphene channel FETs (Field Effect Transistors) on a single substrate. There are following achievements as compared with previous works: (1) direct deposition of controllable, arbitrary fiber patterns to construct graphene-based transistor, in which near-field electrospinning process is integrated to pattern the polymer fibers; (2) a maskless doping process to make both n-and/or p-type graphene on the same substrate, in which electrospun fibers serve as both the oxygen plasma etching mask and chemical doping sources, simultaneously; and As such, the demonstrated process could open up a new class of graphene-based devices for various applications.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages201-204
Number of pages4
DOIs
Publication statusPublished - 2013 Apr 2
EventIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China
Duration: 2013 Jan 202013 Jan 24

Other

OtherIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
CountryTaiwan, Province of China
CityTaipei
Period13/1/2013/1/24

Fingerprint

Graphite
Field effect transistors
Graphene
graphene
field effect transistors
fibers
Fibers
Doping (additives)
Plasma etching
oxygen plasma
Electrospinning
plasma etching
Substrates
Masks
near fields
Polymers
Transistors
transistors
masks
Oxygen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Chang, J., Liu, Y., Kwang, H., Lee, B. Y., Lee, S. W., & Lin, L. (2013). Direct-write n- and p-type graphene channel FETs. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 201-204). [6474212] https://doi.org/10.1109/MEMSYS.2013.6474212

Direct-write n- and p-type graphene channel FETs. / Chang, Jiyoung; Liu, Yumeng; Kwang, Heo; Lee, Byung Yang; Lee, Seung Wuk; Lin, Liwei.

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2013. p. 201-204 6474212.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chang, J, Liu, Y, Kwang, H, Lee, BY, Lee, SW & Lin, L 2013, Direct-write n- and p-type graphene channel FETs. in Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)., 6474212, pp. 201-204, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013, Taipei, Taiwan, Province of China, 13/1/20. https://doi.org/10.1109/MEMSYS.2013.6474212
Chang J, Liu Y, Kwang H, Lee BY, Lee SW, Lin L. Direct-write n- and p-type graphene channel FETs. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2013. p. 201-204. 6474212 https://doi.org/10.1109/MEMSYS.2013.6474212
Chang, Jiyoung ; Liu, Yumeng ; Kwang, Heo ; Lee, Byung Yang ; Lee, Seung Wuk ; Lin, Liwei. / Direct-write n- and p-type graphene channel FETs. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2013. pp. 201-204
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