Direct-write n- and p-type graphene channel FETs

Jiyoung Chang, Yumeng Liu, Heo Kwang, Byung Yang Lee, Seung Wuk Lee, Liwei Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a maskless, direct-write process to create both n- and p-type graphene channel FETs (Field Effect Transistors) on a single substrate. There are following achievements as compared with previous works: (1) direct deposition of controllable, arbitrary fiber patterns to construct graphene-based transistor, in which near-field electrospinning process is integrated to pattern the polymer fibers; (2) a maskless doping process to make both n-and/or p-type graphene on the same substrate, in which electrospun fibers serve as both the oxygen plasma etching mask and chemical doping sources, simultaneously; and As such, the demonstrated process could open up a new class of graphene-based devices for various applications.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages201-204
Number of pages4
DOIs
Publication statusPublished - 2013 Apr 2
EventIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China
Duration: 2013 Jan 202013 Jan 24

Other

OtherIEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
CountryTaiwan, Province of China
CityTaipei
Period13/1/2013/1/24

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Chang, J., Liu, Y., Kwang, H., Lee, B. Y., Lee, S. W., & Lin, L. (2013). Direct-write n- and p-type graphene channel FETs. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 201-204). [6474212] https://doi.org/10.1109/MEMSYS.2013.6474212