Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Emre Sari, Lee Woon Jang, Jong Hyeob Baek, In-Hwan Lee, Xiao Wei Sun, Hilmi Volkan Demir

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Abstract

We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths

Original languageEnglish
Pages (from-to)1128-1136
Number of pages9
JournalOptics Express
Volume21
Issue number1
DOIs
Publication statusPublished - 2013 Jan 14
Externally publishedYes

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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