Dislocations introduced in n-GaN at room temperature cause conductivity inversion

Eugene B. Yakimov, Pavel S. Vergeles, Alexander Y. Polyakov, Ivan V. Shchemerov, A. V. Chernyh, A. A. Vasilev, A. I. Kochkova, In Hwan Lee, S. J. Pearton

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Chemical Compounds

Engineering & Materials Science