Disorder and ferromagnetism in diluted magnetic semiconductors

S. R. Eric Yang, A. H. MacDonald

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


We have investigated the interplay between disorder and ferromagnetism in III1-xMnx V semiconductors. Our study is based on a model in which S = 5/2 Mn local moments are exchange coupled to valence-band holes that interact via Coulomb interactions with each other, with ionized Mn acceptors, and with the antisite defects present in these materials. We find quasiparticle participation ratios consistent with a metal-insulator transition that occurs in the ferromagnetic state near x∼0.01. By evaluating the distribution of exchange mean fields at Mn moment sites, we provide evidence in favor of the applicability of impurity-band magnetic-polaron and hole-fluid models on insulating and metallic sides of the phase transition, respectively.

Original languageEnglish
Article number155202
Pages (from-to)1552021-1552026
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
Publication statusPublished - 2003 Apr 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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