Disorder and ferromagnetism in diluted magnetic semiconductors

Sung Ryul Yang, A. H. MacDonald

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We have investigated the interplay between disorder and ferromagnetism in III1-xMnx V semiconductors. Our study is based on a model in which S = 5/2 Mn local moments are exchange coupled to valence-band holes that interact via Coulomb interactions with each other, with ionized Mn acceptors, and with the antisite defects present in these materials. We find quasiparticle participation ratios consistent with a metal-insulator transition that occurs in the ferromagnetic state near x∼0.01. By evaluating the distribution of exchange mean fields at Mn moment sites, we provide evidence in favor of the applicability of impurity-band magnetic-polaron and hole-fluid models on insulating and metallic sides of the phase transition, respectively.

Original languageEnglish
Article number155202
Pages (from-to)1552021-1552026
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number15
Publication statusPublished - 2003 Apr 1

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Ferromagnetism
ferromagnetism
disorders
moments
antisite defects
Gene Conversion
Metal insulator transition
Valence bands
Coulomb interactions
Phase transitions
insulators
Impurities
Semiconductor materials
valence
impurities
Defects
Fluids
fluids
metals
interactions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Disorder and ferromagnetism in diluted magnetic semiconductors. / Yang, Sung Ryul; MacDonald, A. H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 67, No. 15, 155202, 01.04.2003, p. 1552021-1552026.

Research output: Contribution to journalArticle

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