Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices

A. Hossain, L. Xu, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, Kihyun Kim, R. B. James

Research output: Contribution to journalArticle

5 Citations (Scopus)


We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.

Original languageEnglish
Pages (from-to)146-148
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
Publication statusPublished - 2011 Oct 1
Externally publishedYes



  • CdZnTe
  • Detectors
  • Dislocations
  • IR transmission
  • Pipes
  • Te inclusions

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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