Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices

A. Hossain; L. Xu; A. E. Bolotnikov; G. S. Camarda; Y. Cui; G. Yang; K. H. Kim; R. B. James

doi:10.1016/j.nima.2011.01.162

Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices

A. Hossain, L. Xu, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, K. H. Kim, R. B. James

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.

Original language	English
Pages (from-to)	146-148
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	652
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2011.01.162
Publication status	Published - 2011 Oct 1
Externally published	Yes

Keywords

CdZnTe
Detectors
Dislocations
IR transmission
Pipes
Te inclusions

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2011.01.162

Cite this

Hossain, A., Xu, L., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Yang, G., Kim, K. H., & James, R. B. (2011). Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 652(1), 146-148. https://doi.org/10.1016/j.nima.2011.01.162

Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices. / Hossain, A.; Xu, L.; Bolotnikov, A. E. et al.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 652, No. 1, 01.10.2011, p. 146-148.

Research output: Contribution to journal › Article › peer-review

Hossain, A, Xu, L, Bolotnikov, AE, Camarda, GS, Cui, Y, Yang, G, Kim, KH & James, RB 2011, 'Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 652, no. 1, pp. 146-148. https://doi.org/10.1016/j.nima.2011.01.162

Hossain A, Xu L, Bolotnikov AE, Camarda GS, Cui Y, Yang G et al. Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2011 Oct 1;652(1):146-148. doi: 10.1016/j.nima.2011.01.162

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abstract = "We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.",

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AB - We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.

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Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices

Abstract

Keywords

ASJC Scopus subject areas

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