We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.
|Number of pages||3|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 2011 Oct 1|
- IR transmission
- Te inclusions
ASJC Scopus subject areas
- Nuclear and High Energy Physics