DLTS: A promising technique for the identification of the recombination and compensator centers in solar cell materials

Aurangzeb Khan, Masafumi Yamaguchi, Haeseok Lee, Nicholas J. Ekins-Daukes, Tatsuya Takamoto, Mitsuru Imaizumi, Steve Taylor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers. In this invited paper we provide an overview of the extensive R&D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages1763-1768
Number of pages6
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

Fingerprint

Deep level transient spectroscopy
Solar cells
Point defects
Activation energy
Semiconductor materials
Monitoring

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Khan, A., Yamaguchi, M., Lee, H., Ekins-Daukes, N. J., Takamoto, T., Imaizumi, M., & Taylor, S. (2007). DLTS: A promising technique for the identification of the recombination and compensator centers in solar cell materials. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1763-1768). [4059998] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). https://doi.org/10.1109/WCPEC.2006.279832

DLTS : A promising technique for the identification of the recombination and compensator centers in solar cell materials. / Khan, Aurangzeb; Yamaguchi, Masafumi; Lee, Haeseok; Ekins-Daukes, Nicholas J.; Takamoto, Tatsuya; Imaizumi, Mitsuru; Taylor, Steve.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 1763-1768 4059998 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Khan, A, Yamaguchi, M, Lee, H, Ekins-Daukes, NJ, Takamoto, T, Imaizumi, M & Taylor, S 2007, DLTS: A promising technique for the identification of the recombination and compensator centers in solar cell materials. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059998, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, pp. 1763-1768, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279832
Khan A, Yamaguchi M, Lee H, Ekins-Daukes NJ, Takamoto T, Imaizumi M et al. DLTS: A promising technique for the identification of the recombination and compensator centers in solar cell materials. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 1763-1768. 4059998. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279832
Khan, Aurangzeb ; Yamaguchi, Masafumi ; Lee, Haeseok ; Ekins-Daukes, Nicholas J. ; Takamoto, Tatsuya ; Imaizumi, Mitsuru ; Taylor, Steve. / DLTS : A promising technique for the identification of the recombination and compensator centers in solar cell materials. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. pp. 1763-1768 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).
@inproceedings{a051dd4298c04631b14b84fcb3d249b1,
title = "DLTS: A promising technique for the identification of the recombination and compensator centers in solar cell materials",
abstract = "Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers. In this invited paper we provide an overview of the extensive R&D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.",
author = "Aurangzeb Khan and Masafumi Yamaguchi and Haeseok Lee and Ekins-Daukes, {Nicholas J.} and Tatsuya Takamoto and Mitsuru Imaizumi and Steve Taylor",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/WCPEC.2006.279832",
language = "English",
isbn = "1424400163",
series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
pages = "1763--1768",
booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

}

TY - GEN

T1 - DLTS

T2 - A promising technique for the identification of the recombination and compensator centers in solar cell materials

AU - Khan, Aurangzeb

AU - Yamaguchi, Masafumi

AU - Lee, Haeseok

AU - Ekins-Daukes, Nicholas J.

AU - Takamoto, Tatsuya

AU - Imaizumi, Mitsuru

AU - Taylor, Steve

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers. In this invited paper we provide an overview of the extensive R&D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.

AB - Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers. In this invited paper we provide an overview of the extensive R&D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.

UR - http://www.scopus.com/inward/record.url?scp=41749106414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41749106414&partnerID=8YFLogxK

U2 - 10.1109/WCPEC.2006.279832

DO - 10.1109/WCPEC.2006.279832

M3 - Conference contribution

AN - SCOPUS:41749106414

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 1763

EP - 1768

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

ER -