Domain wall pinning by alternating materials in current-induced domain wall motion

W. J. Kim, T. D. Lee, Kyoung Jin Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

For the application of current-induced domain wall motion, the pinning position of a domain wall must be precisely defined with a low depinning current density. A conventional way of pinning a domain wall is to use a notch which is patterned on an edge of nanostrip. As an alternative scheme of domain wall pinning, we performed micromagnetic investigation of the current-induced domain wall motion in a nanostrip with alternating materials. A segment with different magnetic parameters such as saturation magnetization, exchange constant or crystalline anisotropy can effectively pin a domain wall. It is because the segment acts as an energy barrier in the domain wall motion. Threshold current densities to depin the domain wall in nanostrips with alternating materials were of the order of 108 A/cm2, and can be modulated by changing the material parameters and the length of the segment.

Original languageEnglish
Pages (from-to)4439-4442
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

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Domain walls
Induced currents
domain wall
current density
Threshold current density
Energy barriers
Saturation magnetization
notches
low currents
threshold currents
Anisotropy
Current density
Crystalline materials
saturation
magnetization
anisotropy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Domain wall pinning by alternating materials in current-induced domain wall motion. / Kim, W. J.; Lee, T. D.; Lee, Kyoung Jin.

In: Physica Status Solidi (B) Basic Research, Vol. 244, No. 12, 01.12.2007, p. 4439-4442.

Research output: Contribution to journalArticle

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