Dopant-dependence of one-step metal-induced dopant activation process in silicon

Jin Hong Park, Woo Shik Jung, Hyun-Yong Yu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p and n Si films by forming Ni xSi y. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500°C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p/n and n/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.

Original languageEnglish
Pages (from-to)995-997
Number of pages3
JournalCurrent Applied Physics
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 May 1
Externally publishedYes

Fingerprint

Silicon
Crystallization
Metals
Chemical activation
Doping (additives)
activation
crystallization
silicon
metals
junction diodes
Atoms
Boron
p-n junctions
Phosphorus
atoms
phosphorus
Transistors
Diodes
boron
transistors

Keywords

  • Crystallization
  • MIDA
  • One-step MIC

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Dopant-dependence of one-step metal-induced dopant activation process in silicon. / Park, Jin Hong; Jung, Woo Shik; Yu, Hyun-Yong.

In: Current Applied Physics, Vol. 12, No. 3, 01.05.2012, p. 995-997.

Research output: Contribution to journalArticle

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