Dopant profile model in a shallow germanium n+/p junction

Jung Woo Baek, Jaewoo Shim, Jin Hong Park, Woo Shik Jung, Hyun-Yong Yu

Research output: Contribution to journalArticle

Abstract

A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.

Original languageEnglish
Pages (from-to)1855-1858
Number of pages4
JournalJournal of the Korean Physical Society
Volume63
Issue number10
DOIs
Publication statusPublished - 2013 Dec 31

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p-n junctions
germanium
diffusivity
profiles
diffusion theory
least squares method
estimates
normal density functions
annealing
scattering
temperature

Keywords

  • Dopant profile
  • Germanium n/p
  • Shallow junction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dopant profile model in a shallow germanium n+/p junction. / Baek, Jung Woo; Shim, Jaewoo; Park, Jin Hong; Jung, Woo Shik; Yu, Hyun-Yong.

In: Journal of the Korean Physical Society, Vol. 63, No. 10, 31.12.2013, p. 1855-1858.

Research output: Contribution to journalArticle

Baek, Jung Woo ; Shim, Jaewoo ; Park, Jin Hong ; Jung, Woo Shik ; Yu, Hyun-Yong. / Dopant profile model in a shallow germanium n+/p junction. In: Journal of the Korean Physical Society. 2013 ; Vol. 63, No. 10. pp. 1855-1858.
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