Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations

Cheul Ro Lee, In-Hwan Lee, Jeong Mo Yeon, Kyeong Won Seol, Haeng Keun Ahn, Byung Joon Baek

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated the p-type doping characteristics such as crystallinity, electrical resistivity and optical properties of Al0.15Ga0.85N:Mg epilayers grown by MOCVD with various Mg incorporations. While the mirror-like surface without any defects such as cracks and hillocks can be seen in the undoped Al0.15Ga0.85N epilayer which was grown without any intentional doping of Mg, many hexagonal pyramids and small islands are observed in the p-Al0.15Ga0.85N:Mg which was grown with Mg incorporation rate of 50 nmol/min. Mg-doped Al0.15Ga0.85N layers exhibit little increase in the electrical resistivity with Mg incorporation until 40 nmol/min and then shows the abrupt increase above 50 nmol/min. The cathodeluminescene spectra of every Mg-doped layer show that the donor-to-acceptor (D-A) pair transition is dominated at 362 nm, which is red shifted by 19 nm against band edge luminescence emission of the undoped Al0.15Ga0.85N layer. By calculating the relative intensity between D-A pair transition of Mg-doped Al0.15Ga0.85N and band edge emission of the undoped, the change of optical characteristics with different Mg doping level was evaluated. This result suggested that the residual Mg-H complexes in highly Mg-doped Al0.15Ga0.85N are not cracked at a certain activation process and are responsible for the abrupt decrease of optical luminescence characteristics.

Original languageEnglish
Pages (from-to)56-62
Number of pages7
JournalJournal of Crystal Growth
Volume256
Issue number1-2
DOIs
Publication statusPublished - 2003 Aug 1
Externally publishedYes

Fingerprint

Epilayers
Doping (additives)
Luminescence
luminescence
electrical resistivity
Metallorganic chemical vapor deposition
pyramids
metalorganic chemical vapor deposition
crystallinity
Mirrors
cracks
Optical properties
Chemical activation
activation
mirrors
Cracks
optical properties
Defects
defects

Keywords

  • A1. Doping
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations. / Lee, Cheul Ro; Lee, In-Hwan; Yeon, Jeong Mo; Seol, Kyeong Won; Ahn, Haeng Keun; Baek, Byung Joon.

In: Journal of Crystal Growth, Vol. 256, No. 1-2, 01.08.2003, p. 56-62.

Research output: Contribution to journalArticle

Lee, Cheul Ro ; Lee, In-Hwan ; Yeon, Jeong Mo ; Seol, Kyeong Won ; Ahn, Haeng Keun ; Baek, Byung Joon. / Doping characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations. In: Journal of Crystal Growth. 2003 ; Vol. 256, No. 1-2. pp. 56-62.
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AU - Baek, Byung Joon

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N2 - We have investigated the p-type doping characteristics such as crystallinity, electrical resistivity and optical properties of Al0.15Ga0.85N:Mg epilayers grown by MOCVD with various Mg incorporations. While the mirror-like surface without any defects such as cracks and hillocks can be seen in the undoped Al0.15Ga0.85N epilayer which was grown without any intentional doping of Mg, many hexagonal pyramids and small islands are observed in the p-Al0.15Ga0.85N:Mg which was grown with Mg incorporation rate of 50 nmol/min. Mg-doped Al0.15Ga0.85N layers exhibit little increase in the electrical resistivity with Mg incorporation until 40 nmol/min and then shows the abrupt increase above 50 nmol/min. The cathodeluminescene spectra of every Mg-doped layer show that the donor-to-acceptor (D-A) pair transition is dominated at 362 nm, which is red shifted by 19 nm against band edge luminescence emission of the undoped Al0.15Ga0.85N layer. By calculating the relative intensity between D-A pair transition of Mg-doped Al0.15Ga0.85N and band edge emission of the undoped, the change of optical characteristics with different Mg doping level was evaluated. This result suggested that the residual Mg-H complexes in highly Mg-doped Al0.15Ga0.85N are not cracked at a certain activation process and are responsible for the abrupt decrease of optical luminescence characteristics.

AB - We have investigated the p-type doping characteristics such as crystallinity, electrical resistivity and optical properties of Al0.15Ga0.85N:Mg epilayers grown by MOCVD with various Mg incorporations. While the mirror-like surface without any defects such as cracks and hillocks can be seen in the undoped Al0.15Ga0.85N epilayer which was grown without any intentional doping of Mg, many hexagonal pyramids and small islands are observed in the p-Al0.15Ga0.85N:Mg which was grown with Mg incorporation rate of 50 nmol/min. Mg-doped Al0.15Ga0.85N layers exhibit little increase in the electrical resistivity with Mg incorporation until 40 nmol/min and then shows the abrupt increase above 50 nmol/min. The cathodeluminescene spectra of every Mg-doped layer show that the donor-to-acceptor (D-A) pair transition is dominated at 362 nm, which is red shifted by 19 nm against band edge luminescence emission of the undoped Al0.15Ga0.85N layer. By calculating the relative intensity between D-A pair transition of Mg-doped Al0.15Ga0.85N and band edge emission of the undoped, the change of optical characteristics with different Mg doping level was evaluated. This result suggested that the residual Mg-H complexes in highly Mg-doped Al0.15Ga0.85N are not cracked at a certain activation process and are responsible for the abrupt decrease of optical luminescence characteristics.

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