Doping effect on the properties of III-V ferromagnetic semiconductor GaMnAs epilayers and their superlattices

Sang Hoon Lee, S. J. Chung, X. Liu, J. K. Furdyna

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13 Citations (Scopus)

Abstract

We present a systematic study on the properties of the ferromagnetic (FM) III-V-based semiconductor GaMnAs, including extrinsically doped GaMnAs: Be and its heterostructures in the form of superlattices. In an attempt to further improve the Curie temperature T c of GaMnAs, we have undertaken a systematic program of extrinsic p-doping of this material. In GaMnAs with low x (x = 0.03), T c is, indeed, seen to increase monotonically with increasing Be doping. We also studied the effect of p-doping of non-magnetic spacer layers on the magnetic properties of GaMnAs/GaAs superlattices (SLs). While Be-doped SLs exhibited relatively robust remanent magnetization and a larger coercivity over a broad temperature range, undoped SLs showed a fast decrease in the remanent magnetization with temperature, and a rather small coercivity. We propose that the observed hardness of the magnetization in SLs with Be-doped GaAs layers is related to the interlayer coupling introduced by the doping of the non-magnetic layers.

Original languageEnglish
Pages (from-to)444-447
Number of pages4
JournalJournal of the Korean Physical Society
Volume47
Issue number3
Publication statusPublished - 2005 Sep 1

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superlattices
magnetization
coercivity
spacers
Curie temperature
interlayers
hardness
magnetic properties
temperature

Keywords

  • Doping
  • GaMnAs
  • Superlattice

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Doping effect on the properties of III-V ferromagnetic semiconductor GaMnAs epilayers and their superlattices. / Lee, Sang Hoon; Chung, S. J.; Liu, X.; Furdyna, J. K.

In: Journal of the Korean Physical Society, Vol. 47, No. 3, 01.09.2005, p. 444-447.

Research output: Contribution to journalArticle

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N2 - We present a systematic study on the properties of the ferromagnetic (FM) III-V-based semiconductor GaMnAs, including extrinsically doped GaMnAs: Be and its heterostructures in the form of superlattices. In an attempt to further improve the Curie temperature T c of GaMnAs, we have undertaken a systematic program of extrinsic p-doping of this material. In GaMnAs with low x (x = 0.03), T c is, indeed, seen to increase monotonically with increasing Be doping. We also studied the effect of p-doping of non-magnetic spacer layers on the magnetic properties of GaMnAs/GaAs superlattices (SLs). While Be-doped SLs exhibited relatively robust remanent magnetization and a larger coercivity over a broad temperature range, undoped SLs showed a fast decrease in the remanent magnetization with temperature, and a rather small coercivity. We propose that the observed hardness of the magnetization in SLs with Be-doped GaAs layers is related to the interlayer coupling introduced by the doping of the non-magnetic layers.

AB - We present a systematic study on the properties of the ferromagnetic (FM) III-V-based semiconductor GaMnAs, including extrinsically doped GaMnAs: Be and its heterostructures in the form of superlattices. In an attempt to further improve the Curie temperature T c of GaMnAs, we have undertaken a systematic program of extrinsic p-doping of this material. In GaMnAs with low x (x = 0.03), T c is, indeed, seen to increase monotonically with increasing Be doping. We also studied the effect of p-doping of non-magnetic spacer layers on the magnetic properties of GaMnAs/GaAs superlattices (SLs). While Be-doped SLs exhibited relatively robust remanent magnetization and a larger coercivity over a broad temperature range, undoped SLs showed a fast decrease in the remanent magnetization with temperature, and a rather small coercivity. We propose that the observed hardness of the magnetization in SLs with Be-doped GaAs layers is related to the interlayer coupling introduced by the doping of the non-magnetic layers.

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