Doping effects of lead on CdZnTe crystals

Jong Hee Suh, Sin Hang Cho, Jae Ho Won, Jin Ki Hong, Sun Ung Kim, Kihyun Kim, Hyunsuk Kim, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)


CdZnTe crystals doped with lead (Pb) in the concentration range of 10 16 - 1019 cm-3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals were verified by chemical determination of etch-pit density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. The electrical properties of CdZnTe crystals were studied by Hall and I-V measurements. These results suggest n-type conductivity and the presence of a compensation mechanism due to the Pb dopant incorporation. It was found that the Pb-doped CdZnTe crystals had resistivity values in the range 109 - 1011 Ω·cm and showed higher dark-current stability.

Original languageEnglish
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 3
Publication statusPublished - 2006 Dec 1


  • CdZnTe
  • Compensation
  • Heavy metal doping
  • High resistivity
  • Ii-VI semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Suh, J. H., Cho, S. H., Won, J. H., Hong, J. K., Kim, S. U., Kim, K., Kim, H., & Kim, S. (2006). Doping effects of lead on CdZnTe crystals. Journal of the Korean Physical Society, 49(SUPPL. 3).