Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts

M. D. Kim; J. M. Baek; Y. D. Woo; S. G. Kim; K. S. Chung; T. G. Kim

doi:10.3938/jkps.50.1925

Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts

M. D. Kim, J. M. Baek, Y. D. Woo, S. G. Kim, K. S. Chung, T. G. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard-ring avalanche photodiode (APD) structure with recess etching. Bandwidth measurements were used to characterize the APD. The hole concentration and the specific contact resistance of the APD structure were found to be 1 ×10 ¹⁹ cm^-3 and 2.8 × 10^-6 Ωcm ^-2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz.

Original language	English
Pages (from-to)	1925-1928
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	6
DOIs	https://doi.org/10.3938/jkps.50.1925
Publication status	Published - 2007 Jun

Keywords

Avalanche photodiode
Chemical vapor deposition
Diffusion
Indium phosphide

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.3938/jkps.50.1925

Cite this

@article{5a0938cf36c14853aa967ca42172f83c,

title = "Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts",

abstract = "We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard-ring avalanche photodiode (APD) structure with recess etching. Bandwidth measurements were used to characterize the APD. The hole concentration and the specific contact resistance of the APD structure were found to be 1 ×10 19 cm-3 and 2.8 × 10-6 Ωcm -2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz.",

keywords = "Avalanche photodiode, Chemical vapor deposition, Diffusion, Indium phosphide",

author = "Kim, {M. D.} and Baek, {J. M.} and Woo, {Y. D.} and Kim, {S. G.} and Chung, {K. S.} and Kim, {T. G.}",

year = "2007",

month = jun,

doi = "10.3938/jkps.50.1925",

language = "English",

volume = "50",

pages = "1925--1928",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "6",

}

TY - JOUR

T1 - Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts

AU - Kim, M. D.

AU - Baek, J. M.

AU - Woo, Y. D.

AU - Kim, S. G.

AU - Chung, K. S.

AU - Kim, T. G.

PY - 2007/6

Y1 - 2007/6

N2 - We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard-ring avalanche photodiode (APD) structure with recess etching. Bandwidth measurements were used to characterize the APD. The hole concentration and the specific contact resistance of the APD structure were found to be 1 ×10 19 cm-3 and 2.8 × 10-6 Ωcm -2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz.

AB - We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard-ring avalanche photodiode (APD) structure with recess etching. Bandwidth measurements were used to characterize the APD. The hole concentration and the specific contact resistance of the APD structure were found to be 1 ×10 19 cm-3 and 2.8 × 10-6 Ωcm -2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz.

KW - Avalanche photodiode

KW - Chemical vapor deposition

KW - Diffusion

KW - Indium phosphide

UR - http://www.scopus.com/inward/record.url?scp=34547352786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547352786&partnerID=8YFLogxK

U2 - 10.3938/jkps.50.1925

DO - 10.3938/jkps.50.1925

M3 - Article

AN - SCOPUS:34547352786

SN - 0374-4884

VL - 50

SP - 1925

EP - 1928

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this