Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts

M. D. Kim, J. M. Baek, Y. D. Woo, S. G. Kim, K. S. Chung, T. G. Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)


We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard-ring avalanche photodiode (APD) structure with recess etching. Bandwidth measurements were used to characterize the APD. The hole concentration and the specific contact resistance of the APD structure were found to be 1 ×10 19 cm-3 and 2.8 × 10-6 Ωcm -2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz.

Original languageEnglish
Pages (from-to)1925-1928
Number of pages4
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2007 Jun



  • Avalanche photodiode
  • Chemical vapor deposition
  • Diffusion
  • Indium phosphide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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