Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts

M. D. Kim, J. M. Baek, Y. D. Woo, S. G. Kim, K. S. Chung, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We discuss the heavily-doped Zn diffusion properties that result from two-step rapid thermal annealing processes and characterize the use of Au/Zn-based metal alloys as ohmic contacts, in a double floating guard-ring avalanche photodiode (APD) structure with recess etching. Bandwidth measurements were used to characterize the APD. The hole concentration and the specific contact resistance of the APD structure were found to be 1 ×10 19 cm -3 and 2.8 × 10 -6 Ωcm -2, respectively. In addition, the gain-bandwidth product of the APD was found to be over 80 GHz.

Original languageEnglish
Pages (from-to)1925-1928
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number6
Publication statusPublished - 2007 Jun 1

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low resistance
avalanches
floating
photodiodes
electric contacts
rings
bandwidth
recesses
contact resistance
etching
annealing
products
metals

Keywords

  • Avalanche photodiode
  • Chemical vapor deposition
  • Diffusion
  • Indium phosphide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts. / Kim, M. D.; Baek, J. M.; Woo, Y. D.; Kim, S. G.; Chung, K. S.; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 50, No. 6, 01.06.2007, p. 1925-1928.

Research output: Contribution to journalArticle

Kim, M. D. ; Baek, J. M. ; Woo, Y. D. ; Kim, S. G. ; Chung, K. S. ; Kim, Tae Geun. / Double floating guard-ring-type InP/lnGaAs avalanche photodiodes with low-resistance ohmic contacts. In: Journal of the Korean Physical Society. 2007 ; Vol. 50, No. 6. pp. 1925-1928.
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