Double Laser Crystallization (DLC) of pre-patterned amorphous silicon film and amorphous silicon film with a patterned assisting SIO2 layer

Li Xu, Jaewon Chung, Costas P. Grigoropoulos

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

In this study, pre-patterned amorphous silicon films are crystallized by the double laser crystallization (DLC) technique. Temperature distribution upon laser irradiation is modified by patterning the a-Si film, thus controlling the crystal growth. Patterns with a flattened concave feature is found to be favorable for large crystal growth with high localization, yielding grains with the size of 1.5 μm × 4 μm. As an alternate method (to pre-patterning the amorphous silicon film) for obtaining large crystal growth, double laser crystallization of amorphous silicon film with patterned SiO2 cap layer is proposed. The SiO2 layer assists the lateral growth of the crystals by acting as a thermal reservoir and slowing down the cooling rate, and additionally helps reduce the roughness of the polycrystalline surface to about 3nm (R.M.S.). With this alternate method, the grain width is increased from 0.5 μm to 1.5μm.

Original languageEnglish
Pages627-630
Number of pages4
DOIs
Publication statusPublished - 2004
Externally publishedYes
EventProceedings of the ASME Heat Transfer/Fluids Engineering Summer Conference 2004, HT/FED 2004 - Charlotte, NC, United States
Duration: 2004 Jul 112004 Jul 15

Other

OtherProceedings of the ASME Heat Transfer/Fluids Engineering Summer Conference 2004, HT/FED 2004
CountryUnited States
CityCharlotte, NC
Period04/7/1104/7/15

Keywords

  • Double laser crystallization
  • Thin film transistors

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Double Laser Crystallization (DLC) of pre-patterned amorphous silicon film and amorphous silicon film with a patterned assisting SIO<sub>2</sub> layer'. Together they form a unique fingerprint.

Cite this