Drift time variations in CdZnTe detectors measured with alpha particles and gamma rays: Their correlation with detector response

J. Butcher, M. Hamade, M. Petryk, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. De Geronimo, J. Fried, A. Hossain, Kihyun Kim, E. Vernon, G. Yang, R. B. James

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Homogeneity of properties related to material crystallinity is a critical parameter for achieving high-performance CdZnTe (CZT) radiation detectors. Unfortunately, this requirement is not always satisfied in today's commercial CZT material due to high concentrations of extended defects, in particular subgrain boundaries, which are believed to be part of the causes hampering the energy resolution and efficiency of CZT detectors. In the past, the effects of subgrain boundaries have been studied in Si, Ge and other semiconductors. It was demonstrated that subgrain boundaries tend to accumulate secondary phases and impurities causing inhomogeneous distributions of trapping centers. It was also demonstrated that subgrain boundaries result in local perturbations of the electric field, which affect the carrier transport and other properties of semiconductor devices. The subgrain boundaries in CZT material likely behave in a similar way, which makes them responsible for variations in the electron drift time and carrier trapping in CZT detectors. In this work, we employed the transient current technique to measure variations in the electron drift time and related the variations to the device performances and subgrain boundaries, whose presence in the crystals were confirmed with white beam X-ray diffraction topography and infrared transmission microscopy.

Original languageEnglish
Article number6423830
Pages (from-to)1189-1196
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number2
DOIs
Publication statusPublished - 2013 Feb 1
Externally publishedYes

Fingerprint

Alpha particles
Gamma rays
alpha particles
rays
gamma rays
Detectors
detectors
Infrared transmission
Radiation detectors
Carrier transport
Electrons
Semiconductor devices
Topography
Microscopic examination
trapping
Electric fields
Impurities
Semiconductor materials
X ray diffraction
Defects

Keywords

  • CdZnTe
  • Crystal defects
  • CZT detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Butcher, J., Hamade, M., Petryk, M., Bolotnikov, A. E., Camarda, G. S., Cui, Y., ... James, R. B. (2013). Drift time variations in CdZnTe detectors measured with alpha particles and gamma rays: Their correlation with detector response. IEEE Transactions on Nuclear Science, 60(2), 1189-1196. [6423830]. https://doi.org/10.1109/TNS.2012.2234762

Drift time variations in CdZnTe detectors measured with alpha particles and gamma rays : Their correlation with detector response. / Butcher, J.; Hamade, M.; Petryk, M.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Fried, J.; Hossain, A.; Kim, Kihyun; Vernon, E.; Yang, G.; James, R. B.

In: IEEE Transactions on Nuclear Science, Vol. 60, No. 2, 6423830, 01.02.2013, p. 1189-1196.

Research output: Contribution to journalArticle

Butcher, J, Hamade, M, Petryk, M, Bolotnikov, AE, Camarda, GS, Cui, Y, De Geronimo, G, Fried, J, Hossain, A, Kim, K, Vernon, E, Yang, G & James, RB 2013, 'Drift time variations in CdZnTe detectors measured with alpha particles and gamma rays: Their correlation with detector response', IEEE Transactions on Nuclear Science, vol. 60, no. 2, 6423830, pp. 1189-1196. https://doi.org/10.1109/TNS.2012.2234762
Butcher, J. ; Hamade, M. ; Petryk, M. ; Bolotnikov, A. E. ; Camarda, G. S. ; Cui, Y. ; De Geronimo, G. ; Fried, J. ; Hossain, A. ; Kim, Kihyun ; Vernon, E. ; Yang, G. ; James, R. B. / Drift time variations in CdZnTe detectors measured with alpha particles and gamma rays : Their correlation with detector response. In: IEEE Transactions on Nuclear Science. 2013 ; Vol. 60, No. 2. pp. 1189-1196.
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