Dry etch damage in n-type GaN and its recovery by treatment with an N 2 plasma

Ji Myon Lee, Ki Myung Chang, Sang Woo Kim, Chul Huh, In-Hwan Lee, Seong Ju Park

Research output: Contribution to journalArticle

105 Citations (Scopus)


We report on etch-induced damage in n-type GaN caused by an inductively coupled plasma, and damage recovery by means of treatment with an N 2 plasma. As the plasma dc bias was increased by increasing the rf table power during etching, the optical and electrical properties of the etched GaN films deteriorated as the result of etch-induced damage. However, an N 2 plasma treatment for the etched samples effectively removed the etch-induced defects and damage on the surface, leading to improved surface morphology, photoluminescence, and ohmic contact in n-type GaN.

Original languageEnglish
Pages (from-to)7667-7670
Number of pages4
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 2000 Jan 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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