Dual-color emission in hybrid III-nitride/ZnO light emitting diodes

Gon Namkoong, Elaissa Trybus, Maurice C. Cheung, W. Alan Doolittle, Alexander N. Cartwright, Ian Ferguson, Tae Yeon Seong, Jeff Nause

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8 Citations (Scopus)


We report dual-color production of the blue and green regions using hybrid nitride/ZnO light emitting diode (LED) structures grown on ZnO substrates. The blue emission is ascribed to the near-band edge transition in InGaN while green emission is related to Zn-related defect levels formed by the unintentional interdiffusion of Zn into the InGaN active layer from the ZnO substrates.

Original languageEnglish
Article number022101
JournalApplied Physics Express
Issue number2
Publication statusPublished - 2010 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Namkoong, G., Trybus, E., Cheung, M. C., Doolittle, W. A., Cartwright, A. N., Ferguson, I., Seong, T. Y., & Nause, J. (2010). Dual-color emission in hybrid III-nitride/ZnO light emitting diodes. Applied Physics Express, 3(2), [022101]. https://doi.org/10.1143/APEX.3.022101