Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH 3 plasma

Daehyun Kim, Sujin Lee, Byungwhan Kim, Byung Jun Kang, Donghwan Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using pulsed, plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited from SiH4 and NH3 at room temperature. Duty ratio was controlled in a range of 20-100% incrementally by 20% at radio frequency bias powers of 50, 70, and 90 W. Reflectance was studied as a function of the process parameters mentioned earlier. The impact of duty ratio on the reflectance was prominent at 70 W and this was strongly correlated with a ratio of high ion energy to low ion energy. Interestingly, the reflectance at other powers yielded a strong correlation with high ion energy flux. A comparison study with other film properties revealed that the reflectance decreased with a decrease in film thickness. A neural network model was constructed to predict various effects of diagnostic variables on the reflectance.

Original languageEnglish
JournalCurrent Applied Physics
Volume11
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Plasma enhanced chemical vapor deposition
Silicon nitride
silicon nitrides
reflectance
Plasmas
room temperature
Ions
Temperature
ions
Film thickness
energy
radio frequencies
film thickness
silicon nitride
vapor deposition
Fluxes
Neural networks

Keywords

  • Model
  • Plasma-enhanced chemical vapor deposition
  • Pulsed
  • Reflectance
  • Room temperature
  • Silicon nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH 3 plasma. / Kim, Daehyun; Lee, Sujin; Kim, Byungwhan; Kang, Byung Jun; Kim, Donghwan.

In: Current Applied Physics, Vol. 11, No. 1 SUPPL., 01.01.2011.

Research output: Contribution to journalArticle

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