Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH 3 plasma

Daehyun Kim, Sujin Lee, Byungwhan Kim, Byung Jun Kang, Donghwan Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using pulsed, plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited from SiH4 and NH3 at room temperature. Duty ratio was controlled in a range of 20-100% incrementally by 20% at radio frequency bias powers of 50, 70, and 90 W. Reflectance was studied as a function of the process parameters mentioned earlier. The impact of duty ratio on the reflectance was prominent at 70 W and this was strongly correlated with a ratio of high ion energy to low ion energy. Interestingly, the reflectance at other powers yielded a strong correlation with high ion energy flux. A comparison study with other film properties revealed that the reflectance decreased with a decrease in film thickness. A neural network model was constructed to predict various effects of diagnostic variables on the reflectance.

Original languageEnglish
Pages (from-to)S43-S46
JournalCurrent Applied Physics
Volume11
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2011 Jan 1

Keywords

  • Model
  • Plasma-enhanced chemical vapor deposition
  • Pulsed
  • Reflectance
  • Room temperature
  • Silicon nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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