Dynamic-reference based early write termination for low energy SOT-MRAM

Taehwan Kim, Eunjong Yeo, Yunho Jang, Yeongkyo Seo, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Although considered as one of the most viable emerging non-volatile memory, the spin-transfer-torque magnetic random access memory (STT-MRAM) suffers from its weakness in the write operation. Spin-orbit torque magnetic random access memory (SOT-MRAM) has been recently proposed to provide lower write energy consumption. Nevertheless, additional write energy reduction is still on demand for embedded memory purposes. In this paper, we propose an early write termination (EWT) technique for SOT-MRAM, which can greatly reduce the write energy consumption by efficiently removing the unnecessarily long write pulse. The proposed Dynamic Reference Early Termination (DRET) scheme provides energy savings in all write operations while guaranteeing reliable operation. Simulation results using 65nm CMOS technology show that 76.6% of write energy can be saved on average compared to the conventional SOT-MRAM.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728133201
Publication statusPublished - 2020
Event52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online
Duration: 2020 Oct 102020 Oct 21

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2020-October
ISSN (Print)0271-4310

Conference

Conference52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
CityVirtual, Online
Period20/10/1020/10/21

Keywords

  • Early write termination
  • MRAM
  • SOT
  • STT

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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