TY - GEN
T1 - Dynamic-reference based early write termination for low energy SOT-MRAM
AU - Kim, Taehwan
AU - Yeo, Eunjong
AU - Jang, Yunho
AU - Seo, Yeongkyo
AU - Park, Jongsun
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korea government (NRF-2015M3D1A1070465), and the the Industrial Strategic Technology Development Program (10077445, Development of SoC technology based on Spiking Neural Cell for smart mobile and IoT Devices) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea).
Publisher Copyright:
© 2020 IEEE
PY - 2020
Y1 - 2020
N2 - Although considered as one of the most viable emerging non-volatile memory, the spin-transfer-torque magnetic random access memory (STT-MRAM) suffers from its weakness in the write operation. Spin-orbit torque magnetic random access memory (SOT-MRAM) has been recently proposed to provide lower write energy consumption. Nevertheless, additional write energy reduction is still on demand for embedded memory purposes. In this paper, we propose an early write termination (EWT) technique for SOT-MRAM, which can greatly reduce the write energy consumption by efficiently removing the unnecessarily long write pulse. The proposed Dynamic Reference Early Termination (DRET) scheme provides energy savings in all write operations while guaranteeing reliable operation. Simulation results using 65nm CMOS technology show that 76.6% of write energy can be saved on average compared to the conventional SOT-MRAM.
AB - Although considered as one of the most viable emerging non-volatile memory, the spin-transfer-torque magnetic random access memory (STT-MRAM) suffers from its weakness in the write operation. Spin-orbit torque magnetic random access memory (SOT-MRAM) has been recently proposed to provide lower write energy consumption. Nevertheless, additional write energy reduction is still on demand for embedded memory purposes. In this paper, we propose an early write termination (EWT) technique for SOT-MRAM, which can greatly reduce the write energy consumption by efficiently removing the unnecessarily long write pulse. The proposed Dynamic Reference Early Termination (DRET) scheme provides energy savings in all write operations while guaranteeing reliable operation. Simulation results using 65nm CMOS technology show that 76.6% of write energy can be saved on average compared to the conventional SOT-MRAM.
KW - Early write termination
KW - MRAM
KW - SOT
KW - STT
UR - http://www.scopus.com/inward/record.url?scp=85107097430&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85107097430
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
Y2 - 10 October 2020 through 21 October 2020
ER -
