EBIC and CL studies of ELOG GaN films

E. B. Yakimov, P. S. Vergeles, A. V. Govorkov, A. Y. Polyakov, N. B. Smirnov, In-Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Results demonstrating the ability of EBIC and CL methods for ELOG GaN films characterization are presented. It is shown that EBIC measurements allow us to estimate not only the lateral distribution of diffusion length but also the donor distribution in such films. Donor concentration is found to be different in slit and wing regions. A difference in CL and EBIC images is revealed, which is explained by band bending near the boundaries where two overgrowing fronts meet.

Original languageEnglish
Pages (from-to)308-313
Number of pages6
JournalSuperlattices and Microstructures
Volume45
Issue number4-5
DOIs
Publication statusPublished - 2009 Apr 1
Externally publishedYes

Keywords

  • Cathodoluminescence
  • Diffusion length
  • Dislocation
  • EBIC
  • ELOG GaN

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Yakimov, E. B., Vergeles, P. S., Govorkov, A. V., Polyakov, A. Y., Smirnov, N. B., Lee, I-H., Ro Lee, C., & Pearton, S. J. (2009). EBIC and CL studies of ELOG GaN films. Superlattices and Microstructures, 45(4-5), 308-313. https://doi.org/10.1016/j.spmi.2008.09.008