Edge termination for optimized silicon carbide MOSFET breakdown voltage

Sola Woo, Jongmin Geum, Sinsu Kyoung, Man Young Sung

Research output: Contribution to journalArticle

Abstract

In this paper, a 1200-V silicon carbide (SiC) MOSFET field ring was designed to disperse the electric field of an edge region. The field ring structure normally used for silicon (Si) edge termination was applied to SiC, and the same electric field dispersion effect that is seen when using a Si field ring was observed. In order to optimize the breakdown voltage, three design parameters were varied the spacing between the buffer and the field ring, the number of field rings, and the spacing between the field rings. The input parameters used in this paper are the optimized field ring length, depth, and concentration. Using these three parameters, the 1200-V SiC MOSFET edge termination was designed and optimized.

Original languageEnglish
Pages (from-to)585-588
Number of pages4
JournalJournal of Nanoelectronics and Optoelectronics
Volume11
Issue number5
DOIs
Publication statusPublished - 2016

Fingerprint

Electric breakdown
Silicon carbide
Silicon
Electric fields
Buffers
silicon carbide

Keywords

  • Edge termination
  • Field ring
  • Silicon carbide mosfet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Edge termination for optimized silicon carbide MOSFET breakdown voltage. / Woo, Sola; Geum, Jongmin; Kyoung, Sinsu; Sung, Man Young.

In: Journal of Nanoelectronics and Optoelectronics, Vol. 11, No. 5, 2016, p. 585-588.

Research output: Contribution to journalArticle

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