Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

Shihyun Ahn, Yi Hsuan Lin, Fan Ren, Sooyeoun Oh, Younghun Jung, Gwangseok Yang, Ji Hyun Kim, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Stephen J. Pearton

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Planar thin film β-Ga2O3 photodetectors were irradiated with 5 MeV protons at doses from 1013 to 1015cm-2, and the resulting effects on photocurrent, responsivity, quantum efficiency, and photo-to-dark current ratio at 254 nm wavelength were measured at both 25 and 150 °C. The photocurrent increased with dose due to the introduction of damage from nonionizing energy loss by the protons. The total calculated vacancy concentration increased from 5 × 1015 to 5 × 1017 cm-3 over the dose range investigated. The dark current increased in proportion with the implant dose, leading to a decrease in the ratio of photocurrent to dark current. The photocurrent induced by 254 nm illumination increased with dose, from ∼0.3 × 10-7 A at 25 °C for a dose of 1013cm-2 to ∼10-6 A at a dose of 1015cm-2 at a fixed light intensity of 760 μW/cm2. The photo-to-dark current ratio decreased from ∼60 in the control samples to ∼9 after proton doses of 1015cm-2, with corresponding external quantum efficiencies of ∼103% in control samples, ∼2 × 103% for a dose of 1013cm-2, and 104% for a dose of 1015cm-2. The mechanism for the increase in photocurrent is the introduction of gap states, since the dark current of the photodetectors was increased by illuminating with sub-bandgap (red or green laser light) for the proton irradiated samples.

Original languageEnglish
Article number041213
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume34
Issue number4
DOIs
Publication statusPublished - 2016 Jul 1

Fingerprint

Proton irradiation
proton irradiation
Dark currents
Photodetectors
Photocurrents
photometers
Protons
damage
dosage
dark current
photocurrents
Quantum efficiency
Methyl Green
protons
Dosimetry
Vacancies
quantum efficiency
Energy dissipation
Energy gap
Lighting

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors. / Ahn, Shihyun; Lin, Yi Hsuan; Ren, Fan; Oh, Sooyeoun; Jung, Younghun; Yang, Gwangseok; Kim, Ji Hyun; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R.; Pearton, Stephen J.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 34, No. 4, 041213, 01.07.2016.

Research output: Contribution to journalArticle

Ahn, Shihyun ; Lin, Yi Hsuan ; Ren, Fan ; Oh, Sooyeoun ; Jung, Younghun ; Yang, Gwangseok ; Kim, Ji Hyun ; Mastro, Michael A. ; Hite, Jennifer K. ; Eddy, Charles R. ; Pearton, Stephen J. / Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2016 ; Vol. 34, No. 4.
@article{b422766170b048fe92cc062c1242a858,
title = "Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors",
abstract = "Planar thin film β-Ga2O3 photodetectors were irradiated with 5 MeV protons at doses from 1013 to 1015cm-2, and the resulting effects on photocurrent, responsivity, quantum efficiency, and photo-to-dark current ratio at 254 nm wavelength were measured at both 25 and 150 °C. The photocurrent increased with dose due to the introduction of damage from nonionizing energy loss by the protons. The total calculated vacancy concentration increased from 5 × 1015 to 5 × 1017 cm-3 over the dose range investigated. The dark current increased in proportion with the implant dose, leading to a decrease in the ratio of photocurrent to dark current. The photocurrent induced by 254 nm illumination increased with dose, from ∼0.3 × 10-7 A at 25 °C for a dose of 1013cm-2 to ∼10-6 A at a dose of 1015cm-2 at a fixed light intensity of 760 μW/cm2. The photo-to-dark current ratio decreased from ∼60 in the control samples to ∼9 after proton doses of 1015cm-2, with corresponding external quantum efficiencies of ∼103{\%} in control samples, ∼2 × 103{\%} for a dose of 1013cm-2, and 104{\%} for a dose of 1015cm-2. The mechanism for the increase in photocurrent is the introduction of gap states, since the dark current of the photodetectors was increased by illuminating with sub-bandgap (red or green laser light) for the proton irradiated samples.",
author = "Shihyun Ahn and Lin, {Yi Hsuan} and Fan Ren and Sooyeoun Oh and Younghun Jung and Gwangseok Yang and Kim, {Ji Hyun} and Mastro, {Michael A.} and Hite, {Jennifer K.} and Eddy, {Charles R.} and Pearton, {Stephen J.}",
year = "2016",
month = "7",
day = "1",
doi = "10.1116/1.4950872",
language = "English",
volume = "34",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

AU - Ahn, Shihyun

AU - Lin, Yi Hsuan

AU - Ren, Fan

AU - Oh, Sooyeoun

AU - Jung, Younghun

AU - Yang, Gwangseok

AU - Kim, Ji Hyun

AU - Mastro, Michael A.

AU - Hite, Jennifer K.

AU - Eddy, Charles R.

AU - Pearton, Stephen J.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Planar thin film β-Ga2O3 photodetectors were irradiated with 5 MeV protons at doses from 1013 to 1015cm-2, and the resulting effects on photocurrent, responsivity, quantum efficiency, and photo-to-dark current ratio at 254 nm wavelength were measured at both 25 and 150 °C. The photocurrent increased with dose due to the introduction of damage from nonionizing energy loss by the protons. The total calculated vacancy concentration increased from 5 × 1015 to 5 × 1017 cm-3 over the dose range investigated. The dark current increased in proportion with the implant dose, leading to a decrease in the ratio of photocurrent to dark current. The photocurrent induced by 254 nm illumination increased with dose, from ∼0.3 × 10-7 A at 25 °C for a dose of 1013cm-2 to ∼10-6 A at a dose of 1015cm-2 at a fixed light intensity of 760 μW/cm2. The photo-to-dark current ratio decreased from ∼60 in the control samples to ∼9 after proton doses of 1015cm-2, with corresponding external quantum efficiencies of ∼103% in control samples, ∼2 × 103% for a dose of 1013cm-2, and 104% for a dose of 1015cm-2. The mechanism for the increase in photocurrent is the introduction of gap states, since the dark current of the photodetectors was increased by illuminating with sub-bandgap (red or green laser light) for the proton irradiated samples.

AB - Planar thin film β-Ga2O3 photodetectors were irradiated with 5 MeV protons at doses from 1013 to 1015cm-2, and the resulting effects on photocurrent, responsivity, quantum efficiency, and photo-to-dark current ratio at 254 nm wavelength were measured at both 25 and 150 °C. The photocurrent increased with dose due to the introduction of damage from nonionizing energy loss by the protons. The total calculated vacancy concentration increased from 5 × 1015 to 5 × 1017 cm-3 over the dose range investigated. The dark current increased in proportion with the implant dose, leading to a decrease in the ratio of photocurrent to dark current. The photocurrent induced by 254 nm illumination increased with dose, from ∼0.3 × 10-7 A at 25 °C for a dose of 1013cm-2 to ∼10-6 A at a dose of 1015cm-2 at a fixed light intensity of 760 μW/cm2. The photo-to-dark current ratio decreased from ∼60 in the control samples to ∼9 after proton doses of 1015cm-2, with corresponding external quantum efficiencies of ∼103% in control samples, ∼2 × 103% for a dose of 1013cm-2, and 104% for a dose of 1015cm-2. The mechanism for the increase in photocurrent is the introduction of gap states, since the dark current of the photodetectors was increased by illuminating with sub-bandgap (red or green laser light) for the proton irradiated samples.

UR - http://www.scopus.com/inward/record.url?scp=84971499029&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971499029&partnerID=8YFLogxK

U2 - 10.1116/1.4950872

DO - 10.1116/1.4950872

M3 - Article

AN - SCOPUS:84971499029

VL - 34

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 4

M1 - 041213

ER -