Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Yuyin Xi, Yueh Ling Hsieh, Ya Hsi Hwang, Shun Li, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Gwangseok Yang, Hong Yeol Kim, Ji Hyun Kim, Albert G. Baca, Andrew A. Allerman, Carlos A. Sanchez

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Abstract

The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (I<inf>DSS</inf>) was minimal up to an irradiation dose of 2 × 10<sup>13</sup> cm<sup>-2</sup>. By comparison, a dose of 2 × 10<sup>14</sup> cm<sup>-2</sup> dose produced a 12.5% reduction of I<inf>DSS</inf> and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2×10<sup>14</sup> cm<sup>-2</sup> dose compared to 2×10<sup>13</sup> cm<sup>-2</sup>, and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 μm drain to gate distances (L<inf>GD</inf>) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge.

Original languageEnglish
Article number012201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

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