Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Yuyin Xi; Yueh Ling Hsieh; Ya Hsi Hwang; Shun Li; Fan Ren; Stephen J. Pearton; Erin Patrick; Mark E. Law; Gwangseok Yang; Hong Yeol Kim; Jihyun Kim; Albert G. Baca; Andrew A. Allerman; Carlos A. Sanchez

doi:10.1116/1.4836577

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Yuyin Xi, Yueh Ling Hsieh, Ya Hsi Hwang, Shun Li, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Gwangseok Yang, Hong Yeol Kim, Jihyun Kim, Albert G. Baca, Andrew A. Allerman, Carlos A. Sanchez

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (I_DSS) was minimal up to an irradiation dose of 2 × 10¹³ cm^-2. By comparison, a dose of 2 × 10¹⁴ cm^-2 dose produced a 12.5% reduction of I_DSS and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2×10¹⁴ cm^-2 dose compared to 2×10¹³ cm^-2, and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 μm drain to gate distances (L_GD) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge.

Original language	English
Article number	012201
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	32
Issue number	1
DOIs	https://doi.org/10.1116/1.4836577
Publication status	Published - 2014 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4836577

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Xi, Y., Hsieh, Y. L., Hwang, Y. H., Li, S., Ren, F., Pearton, S. J., Patrick, E., Law, M. E., Yang, G., Kim, H. Y., Kim, J., Baca, A. G., Allerman, A. A., & Sanchez, C. A. (2014). Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 32(1), [012201]. https://doi.org/10.1116/1.4836577

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. / Xi, Yuyin; Hsieh, Yueh Ling; Hwang, Ya Hsi et al.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 1, 012201, 01.01.2014.

Research output: Contribution to journal › Article › peer-review

Xi, Y, Hsieh, YL, Hwang, YH, Li, S, Ren, F, Pearton, SJ, Patrick, E, Law, ME, Yang, G, Kim, HY, Kim, J, Baca, AG, Allerman, AA & Sanchez, CA 2014, 'Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 32, no. 1, 012201. https://doi.org/10.1116/1.4836577

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title = "Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors",

abstract = "The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (IDSS) was minimal up to an irradiation dose of 2 × 1013 cm-2. By comparison, a dose of 2 × 1014 cm-2 dose produced a 12.5% reduction of IDSS and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2×1014 cm-2 dose compared to 2×1013 cm-2, and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 μm drain to gate distances (LGD) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge.",

author = "Yuyin Xi and Hsieh, {Yueh Ling} and Hwang, {Ya Hsi} and Shun Li and Fan Ren and Pearton, {Stephen J.} and Erin Patrick and Law, {Mark E.} and Gwangseok Yang and Kim, {Hong Yeol} and Jihyun Kim and Baca, {Albert G.} and Allerman, {Andrew A.} and Sanchez, {Carlos A.}",

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T1 - Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

AU - Xi, Yuyin

AU - Hsieh, Yueh Ling

AU - Hwang, Ya Hsi

AU - Li, Shun

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Patrick, Erin

AU - Law, Mark E.

AU - Yang, Gwangseok

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Baca, Albert G.

AU - Allerman, Andrew A.

AU - Sanchez, Carlos A.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (IDSS) was minimal up to an irradiation dose of 2 × 1013 cm-2. By comparison, a dose of 2 × 1014 cm-2 dose produced a 12.5% reduction of IDSS and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2×1014 cm-2 dose compared to 2×1013 cm-2, and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 μm drain to gate distances (LGD) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge.

AB - The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (IDSS) was minimal up to an irradiation dose of 2 × 1013 cm-2. By comparison, a dose of 2 × 1014 cm-2 dose produced a 12.5% reduction of IDSS and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2×1014 cm-2 dose compared to 2×1013 cm-2, and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 μm drain to gate distances (LGD) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge.

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Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

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