Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films

S. J. Tark, Y. W. Ok, M. G. Kang, H. J. Lim, W. M. Kim, D. Kim

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al2O3). Various AZO films on glass were prepared by changing the H2/(Ar+H2) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H2 flow ratio, respectively. As a result, the AZO/H films grown with 2% H2 addition showed excellent electrical properties with a resistivity of 4.98×10 4 Ωcm. The UV-measurements showed that the optical transmission of the AZO/H films was >85% in the visible range with a wide optical band gap. In addition, the effect of H2 flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied.

Original languageEnglish
Pages (from-to)548-553
Number of pages6
JournalJournal of Electroceramics
Volume23
Issue number2-4
DOIs
Publication statusPublished - 2009 Oct

Keywords

  • Al doping
  • Hydrogenated
  • Rf magnetron sputtering
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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