Abstract
We have investigated the effect of a Mo interlayer on the electrical properties of Ni-silicided n+ p diodes and n+ poly-Si gate electrodes. It is shown that the use of the Mo interlayer results in reduction of the reverse leakage current of the Ni-silicided n+ p diodes. It is also shown that the interlayer effectively serves as a barrier to the in-diffusion of interconnection Al, leading to the formation of the uniform silicide layer. It is further shown that the Ni-silicided poly-Si gate electrodes with the interlayers produce similar equivalent oxide thickness and a positive shift of flatband voltage (VFB), compared to the samples without the interlayers. Secondary ion mass spectroscopy results show that Ni is segregated at the poly- Si SiO2 interface and the Mo interlayer affects the redistribution of phosphorus.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 154 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2007 Aug 6 |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
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Effect of a Mo interlayer on the electrical properties of Ni-silicided n +/p diode and n + poly-Si gate electrode. / Ok, Young Woo; Kim, Donghwan; Choi, Chel Jong; Baek, Sungkwon; Yang, Hyundoek; Seong, Tae Yeon.
In: Journal of the Electrochemical Society, Vol. 154, No. 9, 06.08.2007.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effect of a Mo interlayer on the electrical properties of Ni-silicided n +/p diode and n + poly-Si gate electrode
AU - Ok, Young Woo
AU - Kim, Donghwan
AU - Choi, Chel Jong
AU - Baek, Sungkwon
AU - Yang, Hyundoek
AU - Seong, Tae Yeon
PY - 2007/8/6
Y1 - 2007/8/6
N2 - We have investigated the effect of a Mo interlayer on the electrical properties of Ni-silicided n+ p diodes and n+ poly-Si gate electrodes. It is shown that the use of the Mo interlayer results in reduction of the reverse leakage current of the Ni-silicided n+ p diodes. It is also shown that the interlayer effectively serves as a barrier to the in-diffusion of interconnection Al, leading to the formation of the uniform silicide layer. It is further shown that the Ni-silicided poly-Si gate electrodes with the interlayers produce similar equivalent oxide thickness and a positive shift of flatband voltage (VFB), compared to the samples without the interlayers. Secondary ion mass spectroscopy results show that Ni is segregated at the poly- Si SiO2 interface and the Mo interlayer affects the redistribution of phosphorus.
AB - We have investigated the effect of a Mo interlayer on the electrical properties of Ni-silicided n+ p diodes and n+ poly-Si gate electrodes. It is shown that the use of the Mo interlayer results in reduction of the reverse leakage current of the Ni-silicided n+ p diodes. It is also shown that the interlayer effectively serves as a barrier to the in-diffusion of interconnection Al, leading to the formation of the uniform silicide layer. It is further shown that the Ni-silicided poly-Si gate electrodes with the interlayers produce similar equivalent oxide thickness and a positive shift of flatband voltage (VFB), compared to the samples without the interlayers. Secondary ion mass spectroscopy results show that Ni is segregated at the poly- Si SiO2 interface and the Mo interlayer affects the redistribution of phosphorus.
UR - http://www.scopus.com/inward/record.url?scp=34547506692&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547506692&partnerID=8YFLogxK
U2 - 10.1149/1.2756972
DO - 10.1149/1.2756972
M3 - Article
AN - SCOPUS:34547506692
VL - 154
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 9
ER -