Effect of a Mo interlayer on the electrical properties of Ni-silicided n+/p diode and n+poly-Si gate electrode

Young Woo Ok, Donghwan Kim, Chel Jong Choi, Sungkwon Baek, Hyundoek Yang, Tae Yeon Seong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of a Mo interlayer on the electrical properties of Ni-silicided n+ p diodes and n+ poly-Si gate electrodes. It is shown that the use of the Mo interlayer results in reduction of the reverse leakage current of the Ni-silicided n+ p diodes. It is also shown that the interlayer effectively serves as a barrier to the in-diffusion of interconnection Al, leading to the formation of the uniform silicide layer. It is further shown that the Ni-silicided poly-Si gate electrodes with the interlayers produce similar equivalent oxide thickness and a positive shift of flatband voltage (VFB), compared to the samples without the interlayers. Secondary ion mass spectroscopy results show that Ni is segregated at the poly- Si SiO2 interface and the Mo interlayer affects the redistribution of phosphorus.

Original languageEnglish
Pages (from-to)H822-H824
JournalJournal of the Electrochemical Society
Volume154
Issue number9
DOIs
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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