Effect of a Mo interlayer on the electrical properties of Ni-silicided n +/p diode and n + poly-Si gate electrode

Young Woo Ok, Donghwan Kim, Chel Jong Choi, Sungkwon Baek, Hyundoek Yang, Tae Yeon Seong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of a Mo interlayer on the electrical properties of Ni-silicided n+ p diodes and n+ poly-Si gate electrodes. It is shown that the use of the Mo interlayer results in reduction of the reverse leakage current of the Ni-silicided n+ p diodes. It is also shown that the interlayer effectively serves as a barrier to the in-diffusion of interconnection Al, leading to the formation of the uniform silicide layer. It is further shown that the Ni-silicided poly-Si gate electrodes with the interlayers produce similar equivalent oxide thickness and a positive shift of flatband voltage (VFB), compared to the samples without the interlayers. Secondary ion mass spectroscopy results show that Ni is segregated at the poly- Si SiO2 interface and the Mo interlayer affects the redistribution of phosphorus.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number9
DOIs
Publication statusPublished - 2007 Aug 6

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Polysilicon
interlayers
Diodes
Electric properties
diodes
electrical properties
Electrodes
electrodes
Leakage currents
Phosphorus
Oxides
Spectroscopy
Ions
Electric potential
phosphorus
leakage
mass spectroscopy
oxides
shift
electric potential

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Effect of a Mo interlayer on the electrical properties of Ni-silicided n +/p diode and n + poly-Si gate electrode. / Ok, Young Woo; Kim, Donghwan; Choi, Chel Jong; Baek, Sungkwon; Yang, Hyundoek; Seong, Tae Yeon.

In: Journal of the Electrochemical Society, Vol. 154, No. 9, 06.08.2007.

Research output: Contribution to journalArticle

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AU - Yang, Hyundoek

AU - Seong, Tae Yeon

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