Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers

Sh U. Yuldashev, Hyunsik Im, V. Sh Yalishev, C. S. Park, T. W. Kang, Sanghoon Lee, Y. Sasaki, X. Liu, J. K. Furdyna

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Abstract

The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

Original languageEnglish
Pages (from-to)1206-1208
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number8
DOIs
Publication statusPublished - 2003 Feb 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yuldashev, S. U., Im, H., Yalishev, V. S., Park, C. S., Kang, T. W., Lee, S., Sasaki, Y., Liu, X., & Furdyna, J. K. (2003). Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers. Applied Physics Letters, 82(8), 1206-1208. https://doi.org/10.1063/1.1554482