Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers

Sh U. Yuldashev; Hyunsik Im; V. Sh Yalishev; C. S. Park; T. W. Kang; Sanghoon Lee; Y. Sasaki; X. Liu; J. K. Furdyna

doi:10.1063/1.1554482

Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga_1-xMn_xAs epitaxial layers

Sh U. Yuldashev, Hyunsik Im, V. Sh Yalishev, C. S. Park, T. W. Kang, Sanghoon Lee, Y. Sasaki, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

The effects of additional doping by beryllium (Be) on the properties of Ga_1-xMn_xAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

Original language	English
Pages (from-to)	1206-1208
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1554482
Publication status	Published - 2003 Feb 24

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1554482

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title = "Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers",

abstract = "The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.",

author = "Yuldashev, {Sh U.} and Hyunsik Im and Yalishev, {V. Sh} and Park, {C. S.} and Kang, {T. W.} and Sanghoon Lee and Y. Sasaki and X. Liu and Furdyna, {J. K.}",

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AU - Yuldashev, Sh U.

AU - Im, Hyunsik

AU - Yalishev, V. Sh

AU - Park, C. S.

AU - Kang, T. W.

AU - Lee, Sanghoon

AU - Sasaki, Y.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2003/2/24

Y1 - 2003/2/24

N2 - The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

AB - The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

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VL - 82

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EP - 1208

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga_1-xMn_xAs epitaxial layers

Abstract

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