Effect of Ag Nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

Tae Wook Kim, Seung Hwan Oh, Hyejung Choi, Gunuk Wang, Dong Yu Kim, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the currentvoltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

Original languageEnglish
Pages (from-to)128-132
Number of pages5
JournalJournal of the Korean Physical Society
Volume56
Issue number1
DOIs
Publication statusPublished - 2010 Jan 15
Externally publishedYes

Keywords

  • Ag nanoparticles
  • Organic non-volatile memory device
  • Polyfluorene-derivatives

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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