Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector

Woo Seop Jeong, Dae sik Kim, Junsung Park, Seung Hee Cho, Cheol Kim, Dong Jin Byun

Research output: Contribution to journalArticle

Abstract

In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% ~ 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology.

Original languageEnglish
Pages (from-to)345-348
Number of pages4
JournalJournal of the Korean Physical Society
Volume71
Issue number6
DOIs
Publication statusPublished - 2017 Sep 1

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Bragg reflectors
thin films
optical properties
scanning electron microscopy

Keywords

  • AlGaN
  • Composition
  • DBR
  • GaN
  • III/V ratio

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector. / Jeong, Woo Seop; Kim, Dae sik; Park, Junsung; Cho, Seung Hee; Kim, Cheol; Byun, Dong Jin.

In: Journal of the Korean Physical Society, Vol. 71, No. 6, 01.09.2017, p. 345-348.

Research output: Contribution to journalArticle

Jeong, Woo Seop ; Kim, Dae sik ; Park, Junsung ; Cho, Seung Hee ; Kim, Cheol ; Byun, Dong Jin. / Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector. In: Journal of the Korean Physical Society. 2017 ; Vol. 71, No. 6. pp. 345-348.
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