Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Ji Hyun Kim, Chien Fong Lo, J. Wayne Johnson

Research output: Contribution to journalArticle

Abstract

The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiNx/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT devices were irradiated with alpha particles at doses of 1 × 1012 or 1 × 1013 cm-2 at a fixed energy of 18 MeV. Device performance degradation was more prominent for the irradiated samples under high frequency operation. At a frequency of 100 kHz and gate voltage pulsed from -6 to 3 V, the saturation drain current reduction was 32% and 41% after alpha irradiation doses of 1 × 1012 and 1 × 1013 cm-2, respectively. The drain current reduction at 100 kHz also depended on the duty cycle. At higher duty cycles, the drain current reduction was less severe. The calculated carrier removal rates were in the range of 2062-2175 cm-1 for the alpha doses studied. The results demonstrate the capability of AlGaN/GaN MISHEMTs in environments where resilience to radiation is required.

Original languageEnglish
Article number041203
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number4
DOIs
Publication statusPublished - 2018 Jul 1

Fingerprint

Alpha particles
Drain current
MIS (semiconductors)
High electron mobility transistors
high electron mobility transistors
Dosimetry
alpha particles
Metals
Irradiation
Semiconductor materials
dosage
irradiation
Gate dielectrics
Silicon nitride
resilience
cycles
Electric properties
silicon nitrides
Radiation
Degradation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors. / Fares, Chaker; Ren, Fan; Pearton, Stephen J.; Yang, Gwangseok; Kim, Ji Hyun; Lo, Chien Fong; Wayne Johnson, J.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, No. 4, 041203, 01.07.2018.

Research output: Contribution to journalArticle

@article{2a3ba43934914133a4a2347cd644950a,
title = "Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors",
abstract = "The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiNx/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT devices were irradiated with alpha particles at doses of 1 × 1012 or 1 × 1013 cm-2 at a fixed energy of 18 MeV. Device performance degradation was more prominent for the irradiated samples under high frequency operation. At a frequency of 100 kHz and gate voltage pulsed from -6 to 3 V, the saturation drain current reduction was 32{\%} and 41{\%} after alpha irradiation doses of 1 × 1012 and 1 × 1013 cm-2, respectively. The drain current reduction at 100 kHz also depended on the duty cycle. At higher duty cycles, the drain current reduction was less severe. The calculated carrier removal rates were in the range of 2062-2175 cm-1 for the alpha doses studied. The results demonstrate the capability of AlGaN/GaN MISHEMTs in environments where resilience to radiation is required.",
author = "Chaker Fares and Fan Ren and Pearton, {Stephen J.} and Gwangseok Yang and Kim, {Ji Hyun} and Lo, {Chien Fong} and {Wayne Johnson}, J.",
year = "2018",
month = "7",
day = "1",
doi = "10.1116/1.5042261",
language = "English",
volume = "36",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

AU - Fares, Chaker

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Yang, Gwangseok

AU - Kim, Ji Hyun

AU - Lo, Chien Fong

AU - Wayne Johnson, J.

PY - 2018/7/1

Y1 - 2018/7/1

N2 - The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiNx/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT devices were irradiated with alpha particles at doses of 1 × 1012 or 1 × 1013 cm-2 at a fixed energy of 18 MeV. Device performance degradation was more prominent for the irradiated samples under high frequency operation. At a frequency of 100 kHz and gate voltage pulsed from -6 to 3 V, the saturation drain current reduction was 32% and 41% after alpha irradiation doses of 1 × 1012 and 1 × 1013 cm-2, respectively. The drain current reduction at 100 kHz also depended on the duty cycle. At higher duty cycles, the drain current reduction was less severe. The calculated carrier removal rates were in the range of 2062-2175 cm-1 for the alpha doses studied. The results demonstrate the capability of AlGaN/GaN MISHEMTs in environments where resilience to radiation is required.

AB - The effects of 18 MeV alpha particle irradiation dose on the electrical properties of SiNx/AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) using in situ grown silicon nitride as the gate dielectric were investigated. The MISHEMT devices were irradiated with alpha particles at doses of 1 × 1012 or 1 × 1013 cm-2 at a fixed energy of 18 MeV. Device performance degradation was more prominent for the irradiated samples under high frequency operation. At a frequency of 100 kHz and gate voltage pulsed from -6 to 3 V, the saturation drain current reduction was 32% and 41% after alpha irradiation doses of 1 × 1012 and 1 × 1013 cm-2, respectively. The drain current reduction at 100 kHz also depended on the duty cycle. At higher duty cycles, the drain current reduction was less severe. The calculated carrier removal rates were in the range of 2062-2175 cm-1 for the alpha doses studied. The results demonstrate the capability of AlGaN/GaN MISHEMTs in environments where resilience to radiation is required.

UR - http://www.scopus.com/inward/record.url?scp=85049873250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049873250&partnerID=8YFLogxK

U2 - 10.1116/1.5042261

DO - 10.1116/1.5042261

M3 - Article

AN - SCOPUS:85049873250

VL - 36

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 4

M1 - 041203

ER -