Effect of alpha-particle irradiation dose on SiN_x/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Engineering & Materials Science

• Alpha particles 100%
• Drain current 84%
• High electron mobility transistors 76%
• Irradiation 68%
• Semiconductor materials 58%
• Metals 42%
• Gate dielectrics 31%
• Silicon nitride 26%
• Electric properties 23%
• Radiation 17%
• Degradation 15%
• Electric potential 11%

Chemical Compounds

• Alpha-Particle 93%
• Electron Mobility 79%
• Drain Current 76%
• Nonconductor 55%
• Dose 51%
• Semiconductor 50%
• Reduction 22%
• Metal 22%
• Nitride 16%
• Dielectric Material 14%
• Electrical Property 13%
• Voltage 12%
• Environment 9%
• Energy 7%

Physics & Astronomy

• MIS (semiconductors) 74%
• high electron mobility transistors 68%
• alpha particles 64%
• dosage 44%
• irradiation 42%
• resilience 22%
• cycles 22%
• silicon nitrides 16%
• degradation 12%
• electrical properties 12%
• saturation 11%
• radiation 9%
• electric potential 8%
• performance 7%
• energy 4%