Effect of an in layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes

Woong Sun Yum, Chang Hyeong Lee, Sungho Jin, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigated the effect of an indium (In) middle layer on the thermal and electrical properties of Ag contacts for high-power GaN-based vertical light-emitting diodes (LEDs). It is shown that with increasing temperature, agglomeration is initiated by the formation of hillocks, followed by the generation of holes, eventually leading to agglomeration. The presence of the In layer effectively delays agglomeration. As a result, the In-combined Ag reflectors exhibit better specific contact resistance (6.0 × 10 -5 Ω cm2) and reflectance (∼75% at 440 nm) when annealed at 500 °C, as compared to Ag only contacts. Blue (440 nm) LEDs fabricated with the 500 °C-annealed In-combined Ag contacts exhibit a forward voltage of 2.99 V (at an injection current of 20 mA) lower than that of LEDs with the 500 °C-annealed Ag only contacts. The output power (at 20 mA) of the LEDs with the 500 °C-annealed In-combined Ag contacts is 29% higher than that of LEDs with the 500 °C-annealed Ag only contacts.

Original languageEnglish
Pages (from-to)77-85
Number of pages9
JournalSuperlattices and Microstructures
Volume56
DOIs
Publication statusPublished - 2013 Feb 18

Fingerprint

Indium
reflectors
Light emitting diodes
indium
Thermodynamic stability
thermal stability
light emitting diodes
agglomeration
Agglomeration
Contact resistance
contact resistance
Electric properties
Thermodynamic properties
thermodynamic properties
electrical properties
injection
reflectance
output
Electric potential
electric potential

Keywords

  • Ag reflector
  • GaN
  • In middle layer
  • LED
  • Light output power

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Effect of an in layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes. / Yum, Woong Sun; Lee, Chang Hyeong; Jin, Sungho; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 56, 18.02.2013, p. 77-85.

Research output: Contribution to journalArticle

@article{43a64a62a81c43e59c619d6e6d56066b,
title = "Effect of an in layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes",
abstract = "We investigated the effect of an indium (In) middle layer on the thermal and electrical properties of Ag contacts for high-power GaN-based vertical light-emitting diodes (LEDs). It is shown that with increasing temperature, agglomeration is initiated by the formation of hillocks, followed by the generation of holes, eventually leading to agglomeration. The presence of the In layer effectively delays agglomeration. As a result, the In-combined Ag reflectors exhibit better specific contact resistance (6.0 × 10 -5 Ω cm2) and reflectance (∼75{\%} at 440 nm) when annealed at 500 °C, as compared to Ag only contacts. Blue (440 nm) LEDs fabricated with the 500 °C-annealed In-combined Ag contacts exhibit a forward voltage of 2.99 V (at an injection current of 20 mA) lower than that of LEDs with the 500 °C-annealed Ag only contacts. The output power (at 20 mA) of the LEDs with the 500 °C-annealed In-combined Ag contacts is 29{\%} higher than that of LEDs with the 500 °C-annealed Ag only contacts.",
keywords = "Ag reflector, GaN, In middle layer, LED, Light output power",
author = "Yum, {Woong Sun} and Lee, {Chang Hyeong} and Sungho Jin and Seong, {Tae Yeon}",
year = "2013",
month = "2",
day = "18",
doi = "10.1016/j.spmi.2012.12.014",
language = "English",
volume = "56",
pages = "77--85",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Effect of an in layer on the thermal stability of Ag reflector for vertical GaN-based light-emitting diodes

AU - Yum, Woong Sun

AU - Lee, Chang Hyeong

AU - Jin, Sungho

AU - Seong, Tae Yeon

PY - 2013/2/18

Y1 - 2013/2/18

N2 - We investigated the effect of an indium (In) middle layer on the thermal and electrical properties of Ag contacts for high-power GaN-based vertical light-emitting diodes (LEDs). It is shown that with increasing temperature, agglomeration is initiated by the formation of hillocks, followed by the generation of holes, eventually leading to agglomeration. The presence of the In layer effectively delays agglomeration. As a result, the In-combined Ag reflectors exhibit better specific contact resistance (6.0 × 10 -5 Ω cm2) and reflectance (∼75% at 440 nm) when annealed at 500 °C, as compared to Ag only contacts. Blue (440 nm) LEDs fabricated with the 500 °C-annealed In-combined Ag contacts exhibit a forward voltage of 2.99 V (at an injection current of 20 mA) lower than that of LEDs with the 500 °C-annealed Ag only contacts. The output power (at 20 mA) of the LEDs with the 500 °C-annealed In-combined Ag contacts is 29% higher than that of LEDs with the 500 °C-annealed Ag only contacts.

AB - We investigated the effect of an indium (In) middle layer on the thermal and electrical properties of Ag contacts for high-power GaN-based vertical light-emitting diodes (LEDs). It is shown that with increasing temperature, agglomeration is initiated by the formation of hillocks, followed by the generation of holes, eventually leading to agglomeration. The presence of the In layer effectively delays agglomeration. As a result, the In-combined Ag reflectors exhibit better specific contact resistance (6.0 × 10 -5 Ω cm2) and reflectance (∼75% at 440 nm) when annealed at 500 °C, as compared to Ag only contacts. Blue (440 nm) LEDs fabricated with the 500 °C-annealed In-combined Ag contacts exhibit a forward voltage of 2.99 V (at an injection current of 20 mA) lower than that of LEDs with the 500 °C-annealed Ag only contacts. The output power (at 20 mA) of the LEDs with the 500 °C-annealed In-combined Ag contacts is 29% higher than that of LEDs with the 500 °C-annealed Ag only contacts.

KW - Ag reflector

KW - GaN

KW - In middle layer

KW - LED

KW - Light output power

UR - http://www.scopus.com/inward/record.url?scp=84873636301&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873636301&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2012.12.014

DO - 10.1016/j.spmi.2012.12.014

M3 - Article

VL - 56

SP - 77

EP - 85

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -