TY - JOUR
T1 - Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration
AU - Lee, Sang Hoon
AU - Byeon, Hyehyeon
AU - Lee, Sangyeop
AU - Yoo, Taehee
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2014/3/14
Y1 - 2014/3/14
N2 - The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 °C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [11̄0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane.
AB - The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 °C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [11̄0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane.
KW - Ferromagnetic semiconductors
KW - Magnetic anisotropy
KW - Planar Hall effect
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U2 - 10.1016/j.cap.2013.11.046
DO - 10.1016/j.cap.2013.11.046
M3 - Article
AN - SCOPUS:84899460316
VL - 14
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - SUPPL. 1
ER -