Abstract
The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 °C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [11̄0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane.
| Original language | English |
|---|---|
| Journal | Current Applied Physics |
| Volume | 14 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2014 Mar 14 |
Fingerprint
Keywords
- Ferromagnetic semiconductors
- Magnetic anisotropy
- Planar Hall effect
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration. / Lee, Sang Hoon; Byeon, Hyehyeon; Lee, Sangyeop; Yoo, Taehee; Liu, X.; Furdyna, J. K.
In: Current Applied Physics, Vol. 14, No. SUPPL. 1, 14.03.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration
AU - Lee, Sang Hoon
AU - Byeon, Hyehyeon
AU - Lee, Sangyeop
AU - Yoo, Taehee
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2014/3/14
Y1 - 2014/3/14
N2 - The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 °C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [11̄0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane.
AB - The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 °C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [11̄0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane.
KW - Ferromagnetic semiconductors
KW - Magnetic anisotropy
KW - Planar Hall effect
UR - http://www.scopus.com/inward/record.url?scp=84899460316&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84899460316&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2013.11.046
DO - 10.1016/j.cap.2013.11.046
M3 - Article
AN - SCOPUS:84899460316
VL - 14
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - SUPPL. 1
ER -