Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film

Ju Won Jeon, Dae Woo Jeon, Trilochan Sahoo, Myoung Kim, Jong Hyeob Baek, Jessica Lynn Hoffman, Nam Soo Kim, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

The effect of annealing temperature on the electrical and optical properties of indium zinc oxide (IZO) (In2O3:ZnO = 90:10 wt.%) thin films has been investigated. The IZO thin films were deposited on glass substrates by radio frequency magnetron sputtering and then subjected to annealing in a mixed ambient of air and oxygen at 100, 200 and 300 °C. All the IZO films were found to have amorphous structure. With the increase of the annealing temperature, the carrier concentration decreased and the resistivity increased. The average transmittance of IZO thin films decreased slightly with annealing temperature. Interestingly, a systematic reduction of the optical band-gap from 3.79 eV to 3.67 eV was observed with annealing temperature. The change in optical band-gap was observed to be caused predominantly by Burstein-Moss band-gap widening effect suggesting unusual absence of band narrowing effect. The effects on optical and electrical properties of IZO films have been discussed in detail.

Original languageEnglish
Pages (from-to)10062-10065
Number of pages4
JournalJournal of Alloys and Compounds
Volume509
Issue number41
DOIs
Publication statusPublished - 2011 Oct 13
Externally publishedYes

Keywords

  • Annealing temperature
  • Burstein-Moss effect
  • InZnO
  • Optical band gap

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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