Effect of atomic hydrogen on the growth of Ge/Si(100)

Se-Jong Kahng, J. Y. Park, K. H. Booh, J. Lee, Y. Khang, Y. Kuk

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Dynamically supplied atomic hydrogen was used for a surfactant growth of Ge on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to ∼1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new "pin holes" are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments.

Original languageEnglish
Pages (from-to)927-929
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number3
Publication statusPublished - 1997 May 1
Externally publishedYes

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Hydrogen
hydrogen
relieving
Surface-Active Agents
Dimers
Microscopes
Surface active agents
surfactants
microscopes
dimers
Fluxes
Scanning
Kinetics
scanning
kinetics
products

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Effect of atomic hydrogen on the growth of Ge/Si(100). / Kahng, Se-Jong; Park, J. Y.; Booh, K. H.; Lee, J.; Khang, Y.; Kuk, Y.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 15, No. 3, 01.05.1997, p. 927-929.

Research output: Contribution to journalArticle

Kahng, Se-Jong ; Park, J. Y. ; Booh, K. H. ; Lee, J. ; Khang, Y. ; Kuk, Y. / Effect of atomic hydrogen on the growth of Ge/Si(100). In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1997 ; Vol. 15, No. 3. pp. 927-929.
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