Effect of atomic hydrogen on the growth of Ge/Si(100)

Se Jong Kahng, J. Y. Park, K. H. Booh, J. Lee, Y. Khang, Y. Kuk

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Dynamically supplied atomic hydrogen was used for a surfactant growth of Ge on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to ∼1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new "pin holes" are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments.

Original languageEnglish
Pages (from-to)927-929
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number3
DOIs
Publication statusPublished - 1997

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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