Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates

Ji Hoon Kim, Sung Min Hwang, Kwang Hyeon Baik, Jung ho Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (1120) a-plane GaN films with different SiNxinterlayers. Complete SiNxcoverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Sidoped GaN layer was unaffected by the introduction of a SiNxinterlayer. The smallest in-plane anisotropy of the (1120) XRD ω-scan widths was found in the sample with multiple SiNxlayers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0h0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study’s representative a-plane GaN samples were well correlated with the BSFrelated results from both the off-axis XRD ω-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

Original languageEnglish
Pages (from-to)557-565
Number of pages9
JournalJournal of Semiconductor Technology and Science
Volume14
Issue number5
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Aluminum Oxide
Stacking faults
Sapphire
X ray diffraction
Substrates
Transmission electron microscopy
Anisotropy
Diffraction
Doping (additives)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates. / Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon; Park, Jung ho.

In: Journal of Semiconductor Technology and Science, Vol. 14, No. 5, 01.01.2014, p. 557-565.

Research output: Contribution to journalArticle

@article{de3f0feee83148d996974363af4cb495,
title = "Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates",
abstract = "We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (1120) a-plane GaN films with different SiNxinterlayers. Complete SiNxcoverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Sidoped GaN layer was unaffected by the introduction of a SiNxinterlayer. The smallest in-plane anisotropy of the (1120) XRD ω-scan widths was found in the sample with multiple SiNxlayers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0h0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study’s representative a-plane GaN samples were well correlated with the BSFrelated results from both the off-axis XRD ω-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.",
keywords = "Gallium nitride, Metal organic chemical vapor deposition, Non-polar, Stacking faults, X-ray diffraction",
author = "Kim, {Ji Hoon} and Hwang, {Sung Min} and Baik, {Kwang Hyeon} and Park, {Jung ho}",
year = "2014",
month = "1",
day = "1",
doi = "10.5573/JSTS.2014.14.5.557",
language = "English",
volume = "14",
pages = "557--565",
journal = "Journal of Semiconductor Technology and Science",
issn = "1598-1657",
publisher = "Institute of Electronics Engineers of Korea",
number = "5",

}

TY - JOUR

T1 - Effect of basal-plane stacking faults on X-ray diffraction of non-polar (1120) a-plane GaN films grown on (1102) r-plane sapphire substrates

AU - Kim, Ji Hoon

AU - Hwang, Sung Min

AU - Baik, Kwang Hyeon

AU - Park, Jung ho

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (1120) a-plane GaN films with different SiNxinterlayers. Complete SiNxcoverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Sidoped GaN layer was unaffected by the introduction of a SiNxinterlayer. The smallest in-plane anisotropy of the (1120) XRD ω-scan widths was found in the sample with multiple SiNxlayers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0h0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study’s representative a-plane GaN samples were well correlated with the BSFrelated results from both the off-axis XRD ω-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

AB - We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (1120) a-plane GaN films with different SiNxinterlayers. Complete SiNxcoverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Sidoped GaN layer was unaffected by the introduction of a SiNxinterlayer. The smallest in-plane anisotropy of the (1120) XRD ω-scan widths was found in the sample with multiple SiNxlayers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0h0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study’s representative a-plane GaN samples were well correlated with the BSFrelated results from both the off-axis XRD ω-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

KW - Gallium nitride

KW - Metal organic chemical vapor deposition

KW - Non-polar

KW - Stacking faults

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84908346163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908346163&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2014.14.5.557

DO - 10.5573/JSTS.2014.14.5.557

M3 - Article

AN - SCOPUS:84908346163

VL - 14

SP - 557

EP - 565

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

SN - 1598-1657

IS - 5

ER -