The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga1-xMnxAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.
ASJC Scopus subject areas
- Physics and Astronomy(all)