Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

S. Lee, S. J. Chung, I. S. Choi, Sh U. Yuldeshev, Hyunsik Im, T. W. Kang, W. L. Lim, Y. Sasaki, X. Liu, T. Wojtowicz, J. K. Furdyna

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Abstract

The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga1-xMnxAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

Original languageEnglish
Pages (from-to)8307-8309
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 3
DOIs
Publication statusPublished - 2003 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, S., Chung, S. J., Choi, I. S., Yuldeshev, S. U., Im, H., Kang, T. W., Lim, W. L., Sasaki, Y., Liu, X., Wojtowicz, T., & Furdyna, J. K. (2003). Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors. Journal of Applied Physics, 93(10 3), 8307-8309. https://doi.org/10.1063/1.1556272