Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics

Byoung Jik Jeong, Mi Ri Joung, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.

Original languageEnglish
Pages (from-to)1811-1813
Number of pages3
JournalJournal of the American Ceramic Society
Volume95
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

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dielectric property
Densification
ceramics
Dielectric properties
Melting point
Sintering
Microwaves
Doping (additives)
Liquids
temperature
Temperature
melting
microwave
sintering
effect
liquid

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics. / Jeong, Byoung Jik; Joung, Mi Ri; Kweon, Sang Hyo; Kim, Jin Seong; Nahm, Sahn; Choi, Ji Won; Hwang, Seong Ju.

In: Journal of the American Ceramic Society, Vol. 95, No. 6, 01.06.2012, p. 1811-1813.

Research output: Contribution to journalArticle

Jeong, Byoung Jik ; Joung, Mi Ri ; Kweon, Sang Hyo ; Kim, Jin Seong ; Nahm, Sahn ; Choi, Ji Won ; Hwang, Seong Ju. / Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics. In: Journal of the American Ceramic Society. 2012 ; Vol. 95, No. 6. pp. 1811-1813.
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abstract = "When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol{\%} Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol{\%} Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol{\%} Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.",
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AU - Jeong, Byoung Jik

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

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AB - When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.

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