Abstract
The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.
| Original language | English |
|---|---|
| Pages (from-to) | 2139-2142 |
| Number of pages | 4 |
| Journal | Journal of the European Ceramic Society |
| Volume | 26 |
| Issue number | 10-11 |
| DOIs | |
| Publication status | Published - 2006 Apr 11 |
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Keywords
- Ba(ZnNb)O
- Dielectric properties
- Microstructure
ASJC Scopus subject areas
- Ceramics and Composites
Cite this
Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics. / Kim, Min Han; Jeong, Young Hun; Nahm, Sahn; Kim, Hyo Tae; Lee, Hwack Joo.
In: Journal of the European Ceramic Society, Vol. 26, No. 10-11, 11.04.2006, p. 2139-2142.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics
AU - Kim, Min Han
AU - Jeong, Young Hun
AU - Nahm, Sahn
AU - Kim, Hyo Tae
AU - Lee, Hwack Joo
PY - 2006/4/11
Y1 - 2006/4/11
N2 - The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.
AB - The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.
KW - Ba(ZnNb)O
KW - Dielectric properties
KW - Microstructure
UR - http://www.scopus.com/inward/record.url?scp=33645535787&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645535787&partnerID=8YFLogxK
U2 - 10.1016/j.jeurceramsoc.2005.09.072
DO - 10.1016/j.jeurceramsoc.2005.09.072
M3 - Article
AN - SCOPUS:33645535787
VL - 26
SP - 2139
EP - 2142
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
IS - 10-11
ER -