Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics

Min Han Kim, Young Hun Jeong, Sahn Nahm, Hyo Tae Kim, Hwack Joo Lee

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.

Original languageEnglish
Pages (from-to)2139-2142
Number of pages4
JournalJournal of the European Ceramic Society
Volume26
Issue number10-11
DOIs
Publication statusPublished - 2006 Apr 11

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Dielectric properties
Sintering
Microwaves
Liquid phase sintering
Densification
Temperature
Eutectics
Permittivity
Liquids
boron oxide

Keywords

  • Ba(ZnNb)O
  • Dielectric properties
  • Microstructure

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics. / Kim, Min Han; Jeong, Young Hun; Nahm, Sahn; Kim, Hyo Tae; Lee, Hwack Joo.

In: Journal of the European Ceramic Society, Vol. 26, No. 10-11, 11.04.2006, p. 2139-2142.

Research output: Contribution to journalArticle

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abstract = "The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol{\%} B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.",
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AU - Lee, Hwack Joo

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AB - The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.

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