Effect of B2O3 on the microstructure and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 ceramics

Beom Jong Kim, Min Han Kim, Sahn Nahm, Hyo Tae Kim, Jong Hee Kim, Jong Hoo Paik, Hyun Ryu, Hwack Joo Lee

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Ba(Mg1/3Ta2/3)O3 (BMT) ceramics have excellent microwave dielectric properties, but they are difficult to sinter because of their high sintering temperature of 1650 °C. However, in this study the addition of B2O3 to BMT ceramics enabled sintering to be performed at temperatures as low as 1300 °C. The BaB4O7 phase, which melts at approximately 900 °C, may have been responsible for the decrease of the sintering temperature. The presence of Ba3Ta5O15 second phase was observed in the BMT ceramics containing a large amount of B2O3. The relative density and dielectric constant (εr) were considerably increased with the addition of a small amount of B2O3. The Q-value was also increased when a small amount of B2O3 was added, but was decreased when the B2O3 content exceeded 0.5 mol%. The decrease of Q × f was explained by the presence of the Ba3Ta5O15 second phase. Excellent microwave dielectric properties of Q × f = 195,000 GHz, εr = 24 and τf = 4.74 ppm/°C were obtained by adding 0.5 mol% B2O3 to BMT ceramic and sintering at 1500 °C for 6 h.

Original languageEnglish
Pages (from-to)1065-1069
Number of pages5
JournalJournal of the European Ceramic Society
Volume27
Issue number2-3
DOIs
Publication statusPublished - 2007

Keywords

  • Dielectric properties
  • Perovskites
  • Powders-solid state reaction
  • Sintering

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Effect of B<sub>2</sub>O<sub>3</sub> on the microstructure and microwave dielectric properties of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> ceramics'. Together they form a unique fingerprint.

Cite this