Abstract
Be/As-coimplanted semi-insulating InP:Fe samples have been activated by rapid thermal annealing using two different capping layers to protect the surface during activation. Activated samples are investigated using Hall measurements, transmission electron microscopy, and secondary ion mass spectrometry. It is found that borosilicate glass capping results in more abrupt Be profiles as compared with aluminum oxide. Aluminum oxide capped samples show better electrical properties. However, an electrically dead layer and dislocation loop at the surface are observed in aluminum oxide capped samples. These results can be related to stress in the capped films during the activation process.
| Original language | English |
|---|---|
| Pages (from-to) | 383-385 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1997 Jul 21 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)