Effect of capping layers on activation of Be/As-implanted semi-insulating InP

Fe

Dongsoo Lee, Jichai Jeong

Research output: Contribution to journalArticle

Abstract

Be/As-coimplanted semi-insulating InP:Fe samples have been activated by rapid thermal annealing using two different capping layers to protect the surface during activation. Activated samples are investigated using Hall measurements, transmission electron microscopy, and secondary ion mass spectrometry. It is found that borosilicate glass capping results in more abrupt Be profiles as compared with aluminum oxide. Aluminum oxide capped samples show better electrical properties. However, an electrically dead layer and dislocation loop at the surface are observed in aluminum oxide capped samples. These results can be related to stress in the capped films during the activation process.

Original languageEnglish
Pages (from-to)383-385
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number3
Publication statusPublished - 1997 Jul 21

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activation
aluminum oxides
borosilicate glass
secondary ion mass spectrometry
electrical properties
transmission electron microscopy
annealing
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of capping layers on activation of Be/As-implanted semi-insulating InP : Fe. / Lee, Dongsoo; Jeong, Jichai.

In: Applied Physics Letters, Vol. 71, No. 3, 21.07.1997, p. 383-385.

Research output: Contribution to journalArticle

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