Effect of CMP on the Te segregation in Ge 2Sb 2Te 5 films

Dong Hee Shin, Dong Hyun Lee, Min Gun Jeong, Hyung Soon Park, Dae-Soon Lim

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Abstract

The surface characteristics of a Ge 2Sb 2Te 5 chalcogenide layer after the chemical mechanical polishing (CMP) process was examined by X-ray diffraction, Auger electron microscopy and optical profiling to identify the dominant CMP mechanism of the new memory material. The platen speeds and applied pressure were varied up to 60 ms and 4 psi, respectively, to understand the CMP variable effect on the surface quality of Ge 2Sb 2Te 5 layer. The amount of Te hillock and surface roughness increased with increasing platen speed and applied pressure of CMP. Te segregation was the main cause of the increasing surface roughness. Stress and thermal effects were observed through the CMP-induced phase transformation from FCC to HCP and Te segregation. The surface properties of the Ge 2Sb 2Te 5 thin films showed a strong correlation with phase transformation and Te segregation. The results show that the surface quality can be improved by reducing the platen speed and pressure.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume159
Issue number3
DOIs
Publication statusPublished - 2012 Feb 29

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ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

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