Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz

J. S. Rieh, M. Khater, A. Jeseph, G. Freeman, D. Ahlgren

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect.

Original languageEnglish
Pages (from-to)1180-1181
Number of pages2
JournalElectronics Letters
Volume42
Issue number20
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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